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MJD31C1G NPN 100V 3A 3.0 A, 100 V, NPN Bipolar Power Transistor

MJD31C1G

NPN 100V 3A 3.0 A, 100 V, NPN Bipolar Power Transistor
Nombor Bahagian
MJD31C1G
kategori
Triode/MOS Tube/Transistor > Triode(BJT)
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
IPAK
Pembungkusan
Tube
Bilangan pakej
75
Penerangan
This bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. MJD31, MJD31C (NPN) and MJD32, MJD32C (PNP) are complementary devices.
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Maklumat perhubungan
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Kata kunci daripada MJD31C1G
MJD31C1G Komponen elektronik
MJD31C1G Jualan
MJD31C1G Pembekal
MJD31C1G Pengedar
MJD31C1G Jadual data
MJD31C1G Foto
MJD31C1G harga
MJD31C1G Tawaran
MJD31C1G Harga terendah
MJD31C1G Cari
MJD31C1G Membeli
MJD31C1G Chip