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FGY75T120SQDN
Field Stop 790W 1.2kV 150A IGBT, Super Field Stop -1200V 75A
Nombor Bahagian
FGY75T120SQDN
kategori
Transistor/MOS tube/transistor > IGBT tube/module
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
TO-247-3
Pembungkusan
Tube
Bilangan pakej
30
Penerangan
This Insulated Gate Bipolar Transistor (IGBT) utilizes a durable and cost-effective Super Field Stop Trench structure to provide excellent performance in demanding switching applications, along with low on-state voltage and lowest switching losses. The IGBT is ideal for UPS and solar applications. The device combines a soft and fast co-encapsulation freewheeling diode with low forward voltage.
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