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FGY60T120SQDN
FGY60T120SQDN IGBT, super cut-off -1200V 60A
Nombor Bahagian
FGY60T120SQDN
kategori
Transistor/MOS tube/transistor > IGBT tube/module
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
TO-247-3
Pembungkusan
Tube
Bilangan pakej
30
Penerangan
This Insulated Gate Bipolar Transistor (IGBT) features a rugged, cost-effective Super Field Stop (FS) Trench structure that provides excellent performance for demanding switching applications, provides low on-state voltage, and minimizes switching losses . This IGBT is ideal for UPS and solar applications. The device combines a soft and fast combined encapsulation freewheeling diode with low forward voltage.
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