Triode/MOS tube/transistor/module
TECH PUBLIC (Taizhou)
Pengeluar
DIODES (US and Taiwan)
Pengeluar
PNP, Vceo=-300V, Ic=-0.2A
Penerangan
MOSFET Type P Drain-Source Voltage (Vdss) (V) -20 Threshold Voltage VGS ±12 Vth(V) 0.45-0.95 On-Resistance RDS(ON) (mΩ) - Continuous Drain Current ID (A) 2
Penerangan
N-channel, 600V, 7A, 1Ω@10V
Penerangan
HXY MOSFET (Huaxuanyang Electronics)
Pengeluar
P-channel, VDSS withstand voltage 60V, ID current 20A, RDON on-resistance 85mR@VGS 10V(MAX), VGS(th) turn-on voltage 1.2-2.5V,
Penerangan
CXW (Chengxinwei)
Pengeluar
DIODES (US and Taiwan)
Pengeluar
onsemi (Ansemi)
Pengeluar
N-channel, 60V, 8A, 24mΩ@10V
Penerangan
onsemi (Ansemi)
Pengeluar
N-channel, 60V, 8A, 24mΩ@10V
Penerangan
APM (Jonway Microelectronics)
Pengeluar
VBsemi (Wei Bi)
Pengeluar
N-channel, 20V, 12A, 10mΩ@10V
Penerangan
SILAN (Silan Micro)
Pengeluar
N-channel, 600V 30mA
Penerangan
SPS (American source core)
Pengeluar
LRC (Leshan Radio)
Pengeluar
NCE (Wuxi New Clean Energy)
Pengeluar
N-channel, 40V, 110A, 2.4mΩ@10V
Penerangan
N-channel, 650V, 1.9?@10V, 4.0A
Penerangan