Triode/MOS tube/transistor/module

Nombor Bahagian
VBsemi (Wei Bi)
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60886 PCS
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Nombor Bahagian
NIKO-SEM (Nickerson)
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N-channel 30V 7A P-channel -30V -6A MOS tube array
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83944 PCS
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Nombor Bahagian
onsemi (Ansemi)
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58285 PCS
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Nombor Bahagian
LRC (Leshan Radio)
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P-channel, 12V, 8.2A, 18mΩ@4.5V
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99367 PCS
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Nombor Bahagian
VISHAY (Vishay)
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74270 PCS
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Nombor Bahagian
onsemi (Ansemi)
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UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. The reverse recovery performance of the body diode of the UniFET FRFET MOSFET is enhanced due to lifetime control. Its trr is less than 100nsec, and its reverse dv/dt immunity is 15V/ns, while these two indicators of ordinary MOSFETs are above 200nsec and 4.5V/nsec respectively. Therefore, in some applications where the performance of the MOSFET body diode is important, it can eliminate additional components and improve system reliability. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.
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52402 PCS
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Nombor Bahagian
WINSOK (Weishuo)
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Configuration Dual Type N-Ch VDS(V) 30 VGS(V) 20 ID(A)Max. 9.8 VGS(th)(v) 1.8 RDS(ON)(m?)@4.295V 18 Qg(nC)@4.5V 6 QgS(nC) 1.5 Qgd(nC) 2.5 Ciss(pF) 590 Coss(pF) 98 Crss(pF) 59
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99792 PCS
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Nombor Bahagian
MICROCHIP (US Microchip)
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94535 PCS
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Nombor Bahagian
TWGMC (Taiwan Dijia)
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Transistor type: NPN Collector-emitter breakdown voltage (Vceo): 80V Collector current (Ic): 1A Power (Pd): 500mW 63-160 BK NPN, Vceo=80V, Ic=1A, hfe=63~160
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61907 PCS
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Nombor Bahagian
onsemi (Ansemi)
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This NPN bipolar transistor is suitable for linear and switching applications. The device features a SOT-23 encapsulation and is suitable for low power surface mount applications.
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60828 PCS
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Nombor Bahagian
JSMSEMI (Jiesheng Micro)
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50564 PCS
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Nombor Bahagian
Nexperia
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55183 PCS
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Nombor Bahagian
Infineon (Infineon)
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82784 PCS
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Nombor Bahagian
Doesshare (Dexin)
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67336 PCS
Dalam stok
Nombor Bahagian
onsemi (Ansemi)
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UniFETTM MOSFETs are a family of high voltage MOSFETs based on planar stripe and DMOS technologies. This MOSFET is suitable for lower on-resistance, better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX, and electronic lamp ballasts.
Penerangan
60696 PCS
Dalam stok
Nombor Bahagian
CBI (Creation Foundation)
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69128 PCS
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Nombor Bahagian
onsemi (Ansemi)
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This 8 A 100 V NPN Darlington bipolar power transistor is suitable for general purpose amplifiers and low speed switching applications. 2N6040, 2N6042 (PNP); and 2N6043, 2N6045 (NPN) are complementary devices.
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72388 PCS
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Nombor Bahagian
Infineon (Infineon)
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52348 PCS
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Nombor Bahagian
Infineon (Infineon)
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73366 PCS
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Nombor Bahagian
APM (Jonway Microelectronics)
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83312 PCS
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