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TPN2R503NC,L1Q
Helaian data

TPN2R503NC,L1Q

MOSFET N CH 30V 40A 8TSON-ADV
Nombor Bahagian
TPN2R503NC,L1Q
Pengeluar/Jenama
Toshiba Semiconductor and Storage
Siri
U-MOSVIII
Status Bahagian
Discontinued at Digi-Key
Pembungkusan
Cut Tape (CT)
Teknologi
MOSFET (Metal Oxide)
Suhu Operasi
150°C (TJ)
Jenis Pemasangan
Surface Mount
Pakej / Kes
8-PowerVDFN
Pakej Peranti Pembekal
8-TSON Advance (3.3x3.3)
Pelesapan Kuasa (Maks)
700mW (Ta), 35W (Tc)
Jenis FET
N-Channel
Ciri FET
-
Longkang ke Voltan Sumber (Vdss)
30V
Arus - Longkang Berterusan (Id) @ 25�C
40A (Ta)
Rds On (Maks) @ Id, Vgs
2.5 mOhm @ 20A, 10V
Vgs(th) (Maks) @ Id
2.3V @ 500µA
Caj Gerbang (Qg) (Maks) @ Vgs
40nC @ 10V
Kapasitan Input (Ciss) (Maks) @ Vds
2230pF @ 15V
Voltan Pemacu (Max Rds Hidup, Min Rds Hidup)
4.5V, 10V
Vgs (Maks)
±20V
Minta Sebut Harga
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