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NRVBS410LT3G 10V 4A 350mV@8A Schottky diodePower rectifier, 4.0 A, 10 V

NRVBS410LT3G

10V 4A 350mV@8A Schottky diodePower rectifier, 4.0 A, 10 V
Nombor Bahagian
NRVBS410LT3G
kategori
diode > Schottky diode
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
SMC (DO-214AB)
Pembungkusan
taping
Bilangan pakej
2500
Penerangan
The device uses the principle of Schottky diode potential barrier and adopts large-area metal-silicon power diode. Advanced geometries employ oxide passivation and epitaxial structures with metal-covered contacts. Ideal for low voltage, high frequency rectification, or as a freewheeling and polarity protection diode in applications where compact size and weight are critical to the system. Typical applications are AC-DC and DC-DC, reverse battery protection and "OR" operation of multiple supply voltages, and other applications where performance and size are critical.
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