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NRVBA320T3G
20V 3A 500mV@3A Schottky diodePower rectifier, 3.0 A, 20 V
Nombor Bahagian
NRVBA320T3G
kategori
diode > Schottky diode
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
SMA
Pembungkusan
taping
Bilangan pakej
5000
Penerangan
The Schottky diode adopts the Schottky diode potential barrier principle in the large-area metal-silicon power diode. The Schottky diode's advanced geometry employs oxide passivation and epitaxy with metal-covered contacts. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system.
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