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MBR120LSFT1G 20V 1A 650mV@3A Schottky diodePower rectifier, 1.0 A, 20 V

MBR120LSFT1G

20V 1A 650mV@3A Schottky diodePower rectifier, 1.0 A, 20 V
Nombor Bahagian
MBR120LSFT1G
kategori
diode > Schottky diode
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
SOD-123FL
Pembungkusan
taping
Bilangan pakej
3000
Penerangan
Using the Schottky diode potential barrier principle, a large area metal-silicon power diode is used. The device is suitable for low-voltage, high-frequency rectification, or applications employing freewheeling and polarity protection diodes, where compact size and weight are critical to the system. This encapsulation is also an easy-to-use alternative to the leadless 34 encapsulation style. Due to its small size, it is suitable for portable and battery-operated products such as cellular and cordless phones, chargers, notebook computers, printers, PDAs and PCMCIA cards. Typical applications are AC-DC and DC-DC converters, reverse battery protection and "OR" operation of multiple supply voltages, and other applications where performance and size are critical.
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