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1N5821G 30V 3A 900mV@9.4A Schottky Barrier Rectifier, 3.0 A, 30 V

1N5821G

30V 3A [email protected] Schottky Barrier Rectifier, 3.0 A, 30 V
Nombor Bahagian
1N5821G
kategori
Diodes > General Purpose Diodes
Pengeluar/Jenama
onsemi (Ansemi)
Enkapsulasi
DO-27
Pembungkusan
boxed
Bilangan pakej
500
Penerangan
The Schottky rectifier uses the Schottky barrier principle and uses a large area metal-silicon power diode. The advanced geometry of this Schottky rectifier features chromium barrier metal, epitaxial structure with oxide passivation, and metal-covered contacts. The rectifier is suitable for low-voltage high-frequency inverters, freewheeling diodes and polarity protection diodes.
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