Triode/MOS tube/transistor/module
VISHAY (Vishay)
Pengeluar
N-channel, 100V, 1.3A, 270mΩ@10V
Penerangan
VBsemi (Wei Bi)
Pengeluar
STANSON (Statson)
Pengeluar
Type N VDSS(V) 30 VGS(V) 20 VTH(V) 1 IDS57°C(A) 12 RDS(Max) 18 PD57°C(W) 2.8
Penerangan
onsemi (Ansemi)
Pengeluar
China Resources Huajing
Pengeluar
HTCSEMI (Haitian core)
Pengeluar
SCR, 600v, 300ma
Penerangan
MSKSEMI (Mesenco)
Pengeluar
Transistor Type: NPN Collector-Emitter Breakdown Voltage (Vceo): 30V Collector Current (Ic): 100mA Power (Pd): 200mW Collector Cutoff Current (Icbo): 100nA Collector-Emitter Saturation Voltage (VCE(sat) @Ic,Ib): 500mV@100mA, 5mA DC current gain (hFE@Ic,Vce): 420@2mA, 5V Characteristic frequency (fT): 100MHz Operating temperature: +150℃@(Tj)
Penerangan
HUASHUO (Huashuo)
Pengeluar
SPS (American source core)
Pengeluar
DIODES (US and Taiwan)
Pengeluar
NPN, 50V, 3A, SOT89
Penerangan
VBsemi (Wei Bi)
Pengeluar
P-channel, 50V, 180mA
Penerangan
onsemi (Ansemi)
Pengeluar
DIODES (US and Taiwan)
Pengeluar
NPN+PNP, Vceo=45V, Ic=100mA, hfe=200~450
Penerangan
VBsemi (Wei Bi)
Pengeluar