Triode/MOS tube/transistor/module

VCES(V) 650 IC(A)@146℃ 40 VCE(sat)(V) 1.8 E(off)(mj) 0.4 Vf(V) 1.8

MOSFET Type N Drain-Source Voltage (Vdss) (V) 60 Threshold Voltage VGS ±20 Vth(V) 1-2.5 On-Resistance RDS(ON) (mΩ) 9.5/12 Continuous Drain Current ID (A) 12

N-channel, 25V, 16.5A, 0.01Ω@10V

Drain-source voltage (Vdss): 900V, continuous drain current (Id) (at 25°C): 9A, gate-source threshold voltage: 2~4V@250uA, drain-source on-resistance: 1.4Ω@Vgs=4.5A ,10V ,Maximum power dissipation (Ta=25°C):68W,Type: N-channel