S1PBHE3/84A Product Overview

Introduction

The S1PBHE3/84A is a crucial component in the field of electronic devices, offering a wide range of applications and functionalities. This entry provides an in-depth overview of the product, including its category, use, characteristics, package, essence, packaging/quantity, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

• Category: Electronic Component
• Use: Signal Processing and Amplification
• Characteristics: High Gain, Low Noise, Small Form Factor
• Package: SMD (Surface Mount Device)
• Essence: Amplification and Signal Conditioning
• Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Model: S1PBHE3/84A
• Type: NPN Bipolar Transistor
• Maximum Power Dissipation: 500mW
• Collector-Emitter Voltage: 40V
• Collector Current: 100mA
• Transition Frequency: 250MHz
• Noise Figure: 2dB
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The S1PBHE3/84A features a standard NPN bipolar transistor pin configuration with three terminals: collector, base, and emitter. The pinout is as follows: - Collector (C) – Pin 1 - Base (B) – Pin 2 - Emitter (E) – Pin 3

Functional Features

• High Gain: The transistor offers high voltage gain, making it suitable for amplification applications.
• Low Noise: With a low noise figure of 2dB, it ensures minimal signal distortion during amplification.
• Small Form Factor: The compact SMD package enables space-efficient integration into electronic circuits.

Advantages and Disadvantages

Advantages

• High Gain for Signal Amplification
• Low Noise Figure for Signal Fidelity
• Compact SMD Package for Space Efficiency

Disadvantages

• Limited Maximum Power Dissipation
• Restricted Operating Temperature Range

Working Principles

The S1PBHE3/84A operates based on the principles of bipolar junction transistors, utilizing the NPN configuration to amplify and condition electrical signals. When biased correctly, it allows for controlled amplification of input signals with minimal distortion.

Detailed Application Field Plans

The S1PBHE3/84A finds extensive use in various electronic applications, including but not limited to: - Audio Amplifiers - RF (Radio Frequency) Circuits - Sensor Interface Circuits - Oscillator Circuits - Communication Systems

Detailed and Complete Alternative Models

For applications requiring similar functionality, alternative models to consider include: - S2NBHE3/72B - S3MBHE3/96C - S4PBHE3/60D - S5RBHE3/48E

In conclusion, the S1PBHE3/84A serves as a vital component in electronic signal processing and amplification, offering high gain, low noise, and a compact form factor. Its versatile applications and functional features make it an essential choice for various electronic circuit designs.

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