STY60NM60

Product Overview

Category: Power MOSFET
Use: High voltage, fast-switching N-channel enhancement mode power transistor
Characteristics: Low input and output capacitance, low gate charge, high avalanche ruggedness
Package: TO-247
Essence: Power efficiency and reliability
Packaging/Quantity: Tube/25 units

Specifications

• Voltage Rating: 600V
• Current Rating: 60A
• RDS(on): 0.036Ω
• Gate Charge (Qg): 70nC
• Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

1. Source (S)
2. Gate (G)
3. Drain (D)

Functional Features

• Fast switching speed
• Low gate drive power loss
• Enhanced avalanche capability
• High dv/dt and di/dt capabilities

Advantages and Disadvantages

Advantages: - High power efficiency - Reliable performance - Low input and output capacitance

Disadvantages: - Higher cost compared to standard MOSFETs - Sensitive to static electricity

Working Principles

STY60NM60 operates on the principle of controlling the flow of current between the drain and source terminals using the gate voltage. When a positive voltage is applied to the gate, it creates an electric field that allows current to flow from the drain to the source.

Detailed Application Field Plans

STY60NM60 is widely used in high-power applications such as: - Switched-mode power supplies - Motor control - Inverters - Welding equipment - Uninterruptible power supplies (UPS)

Detailed and Complete Alternative Models

1. IRFP4668PbF
2. FDPF51N25T
3. IXFN38N100Q2

Note: The above alternatives have similar specifications and can be used as substitutes for STY60NM60.

This completes the English editing encyclopedia entry structure format for STY60NM60, providing comprehensive information about the product's category, use, characteristics, package, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.