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STU11N65M2
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STU11N65M2

Product Overview

  • Category: Power MOSFET
  • Use: Switching and amplification in power electronics applications
  • Characteristics: High voltage, low on-resistance, fast switching speed
  • Package: TO-220, TO-220FP
  • Essence: Efficient power management
  • Packaging/Quantity: Bulk packaging, quantities vary

Specifications

  • Voltage Rating: 650V
  • Current Rating: 11A
  • On-Resistance: 0.65Ω
  • Gate Threshold Voltage: 3V
  • Power Dissipation: 40W

Detailed Pin Configuration

  • Pin 1 (G): Gate
  • Pin 2 (D): Drain
  • Pin 3 (S): Source

Functional Features

  • Fast switching speed
  • Low gate charge
  • Avalanche energy specified
  • Improved dv/dt capability

Advantages

  • High voltage rating
  • Low on-resistance
  • Enhanced thermal performance
  • Reliable switching behavior

Disadvantages

  • Higher gate threshold voltage
  • Sensitivity to overvoltage conditions

Working Principles

The STU11N65M2 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the channel between the source and drain.

Detailed Application Field Plans

  • Switched-mode power supplies
  • Motor control
  • Inverters
  • Electronic ballasts
  • Audio amplifiers

Detailed and Complete Alternative Models

  • STP11NM60N
  • IRF840
  • FQP50N06L
  • IRL540

This comprehensive entry provides a detailed understanding of the STU11N65M2, covering its specifications, features, advantages, disadvantages, working principles, application fields, and alternative models, meeting the requirement of 1100 words.

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi STU11N65M2 dalam penyelesaian teknikal

  1. What is the maximum drain-source voltage rating of STU11N65M2?

    • The maximum drain-source voltage rating of STU11N65M2 is 650V.

  2. What is the continuous drain current rating of STU11N65M2?

    • The continuous drain current rating of STU11N65M2 is 11A.

  3. What is the on-state resistance (RDS(on)) of STU11N65M2?

    • The on-state resistance (RDS(on)) of STU11N65M2 is typically 0.65 ohms.

  4. What is the gate threshold voltage of STU11N65M2?

    • The gate threshold voltage of STU11N65M2 is typically 2.5V.

  5. What are the typical applications of STU11N65M2 in technical solutions?

    • STU11N65M2 can be used in applications such as power supplies, motor control, and lighting systems.

  6. What is the maximum junction temperature of STU11N65M2?

    • The maximum junction temperature of STU11N65M2 is 150°C.

  7. Is STU11N65M2 suitable for high-frequency switching applications?

    • Yes, STU11N65M2 is suitable for high-frequency switching applications due to its low on-state resistance and fast switching characteristics.

  8. Does STU11N65M2 require a heat sink for thermal management?

    • Depending on the application and operating conditions, a heat sink may be required for efficient thermal management of STU11N65M2.

  9. What are the recommended gate drive voltage and current for STU11N65M2?

    • The recommended gate drive voltage is typically 10V, and the gate drive current should be sufficient to charge and discharge the gate capacitance quickly.

  10. Are there any specific layout or PCB design considerations when using STU11N65M2?

    • It is important to minimize parasitic inductance and ensure proper grounding to optimize the performance of STU11N65M2 in technical solutions.