M95040-DRMN8TP/K

Product Overview

The M95040-DRMN8TP/K is a serial Electrically Erasable Programmable Read-Only Memory (EEPROM) belonging to the non-volatile memory category. It is commonly used for storing small amounts of data in various electronic devices. The M95040-DRMN8TP/K is characterized by its low power consumption, high reliability, and compact package. It is typically available in a small form factor and is offered in tape and reel packaging.

Specifications

• Memory Capacity: 4 Kbit
• Interface: Serial I2C
• Operating Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to 85°C
• Package Type: SOIC-8

Detailed Pin Configuration

The M95040-DRMN8TP/K features an 8-pin configuration: 1. A0: Chip Select Input 2. A1: Device Address Input 3. A2: Device Address Input 4. VSS: Ground 5. SDA: Serial Data 6. SCL: Serial Clock 7. WP: Write Protect 8. VCC: Power Supply

Functional Features

• Data Retention: Ensures data integrity during power loss
• Write Protection: Allows for hardware-based protection of stored data
• Sequential Read: Enables efficient retrieval of sequential data

Advantages and Disadvantages

Advantages: - Low power consumption - High reliability - Compact form factor

Disadvantages: - Limited storage capacity - Slower write speeds compared to other memory types

Working Principles

The M95040-DRMN8TP/K operates by utilizing electrically programmable memory cells that can be individually read, written, and erased. It employs a serial I2C interface for communication with the host system, allowing for easy integration into various electronic devices.

Detailed Application Field Plans

The M95040-DRMN8TP/K is widely used in applications requiring non-volatile memory storage, such as: - Consumer electronics - Automotive systems - Industrial control systems

Detailed and Complete Alternative Models

• AT24C04: 4 Kbit I2C EEPROM
• CAT24C04: 4 Kbit I2C CMOS Serial EEPROM
• 24AA04: 4 Kbit I2C Serial EEPROM

In conclusion, the M95040-DRMN8TP/K offers a reliable and efficient solution for non-volatile memory storage in a wide range of electronic applications, despite its limitations in storage capacity and write speed.

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