BR25S256F-WE2

Product Overview

Category

BR25S256F-WE2 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as microcontrollers, embedded systems, and consumer electronics.

Characteristics

• Non-volatile: The BR25S256F-WE2 retains stored data even when power is disconnected.
• High capacity: It offers a storage capacity of 256 kilobits (32 kilobytes).
• Fast access time: The device provides quick access to stored data, ensuring efficient operation.
• Low power consumption: It consumes minimal power during read and write operations.
• Wide operating voltage range: The BR25S256F-WE2 can operate within a wide voltage range, making it suitable for different applications.

Package

The BR25S256F-WE2 is available in a compact and durable package, designed to withstand various environmental conditions. The package ensures the protection of the memory device from physical damage and external interference.

Essence

The essence of BR25S256F-WE2 lies in its ability to reliably store and retrieve data, providing a crucial component for electronic devices that require non-volatile memory.

Packaging/Quantity

This product is typically packaged individually or in reels, depending on the manufacturer's specifications. The quantity per package may vary, but commonly ranges from a few units to hundreds or thousands.

Specifications

• Storage Capacity: 256 kilobits (32 kilobytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage Range: 1.65V to 3.6V
• Access Time: 5 microseconds (maximum)
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Endurance: 100,000 write cycles (minimum)

Detailed Pin Configuration

The BR25S256F-WE2 follows a standard pin configuration for SPI memory devices. The pins are as follows:

1. Chip Select (/CS)
2. Serial Clock (SCLK)
3. Serial Data Input (SI)
4. Serial Data Output (SO)
5. Write Protect (/WP)
6. Hold (/HOLD)
7. Ground (GND)
8. Power Supply (VCC)

Functional Features

• High-Speed Data Transfer: The BR25S256F-WE2 supports high-speed data transfer using the SPI interface, enabling efficient read and write operations.
• Write Protection: The device includes a write protect pin (/WP) that allows users to protect stored data from accidental modification.
• Hardware and Software Reset: It provides options for both hardware and software reset, allowing easy initialization of the memory device.
• Sector Locking: The BR25S256F-WE2 offers sector locking functionality, enabling specific sectors to be protected from modification.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Low power consumption prolongs battery life in portable devices.
• Wide operating voltage range enhances compatibility.
• Compact package design provides durability and protection.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Relatively slower access time compared to volatile memory devices.

Working Principles

The BR25S256F-WE2 utilizes the Serial Peripheral Interface (SPI) protocol to communicate with the host device. It stores data in a series of memory cells, organized into sectors and blocks. When data is written, it is stored in the appropriate memory cell, and when read, the stored data is retrieved and transferred to the host device via the SPI interface.

Detailed Application Field Plans

The BR25S256F-WE2 finds applications in various fields, including but not limited to: - Automotive electronics - Industrial automation - Smart home devices - Medical equipment - Consumer electronics

Detailed and Complete Alternative Models

1. BR25S128F-WE2: A similar non-volatile memory device with a storage capacity of 128 kilobits.
2. BR25S512F-WE2: An alternative model offering higher storage capacity of 512 kilobits.
3. BR25S1024F-WE2: A higher-end alternative model providing a storage capacity of 1024 kilobits.

These alternative models offer different storage capacities to cater to specific application requirements.

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