ON Semiconductor
Imej mungkin representasi.
Lihat spesifikasi untuk butiran produk.
NGTD9R120F2WP
Lihat Butiran Helaian data

NGTD9R120F2WP

Product Overview

  • Category: Power MOSFET
  • Use: Power switching applications
  • Characteristics: High voltage, high current capability, low on-resistance
  • Package: TO-252-3 (DPAK)
  • Essence: Efficient power management
  • Packaging/Quantity: Tape & Reel, 2500 units per reel

Specifications

  • Voltage Rating: 120V
  • Current Rating: 9A
  • On-Resistance: 120mΩ
  • Gate Charge: 18nC
  • Operating Temperature Range: -55°C to 175°C

Detailed Pin Configuration

  1. Source
  2. Gate
  3. Drain

Functional Features

  • Low on-resistance for minimal power dissipation
  • Fast switching speed for improved efficiency
  • Enhanced ruggedness and reliability
  • Low gate charge for reduced drive requirements

Advantages and Disadvantages

Advantages

  • High voltage and current capability
  • Low on-resistance
  • Wide operating temperature range
  • Reliable performance

Disadvantages

  • Sensitive to static electricity
  • Requires careful handling during assembly

Working Principles

The NGTD9R120F2WP operates based on the principles of field-effect transistors, utilizing its gate voltage to control the flow of current between the drain and source terminals.

Detailed Application Field Plans

The NGTD9R120F2WP is suitable for a wide range of power switching applications, including but not limited to: - Motor control systems - Power supplies - Inverters - LED lighting - Battery management systems

Detailed and Complete Alternative Models

  • Alternative Model 1: NGTB25N120L3WG

    • Voltage Rating: 1200V
    • Current Rating: 25A
    • Package: TO-263-3 (D2PAK)

  • Alternative Model 2: NGTG4S150FD

    • Voltage Rating: 150V
    • Current Rating: 4A
    • Package: DFN5x6

  • Alternative Model 3: NGTF8P50N20A

    • Voltage Rating: 200V
    • Current Rating: 8A
    • Package: TO-220AB

In conclusion, the NGTD9R120F2WP Power MOSFET offers high voltage and current capabilities, low on-resistance, and reliable performance, making it an ideal choice for various power switching applications.

Word count: 314

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi NGTD9R120F2WP dalam penyelesaian teknikal

  1. What is the NGTD9R120F2WP?

    • The NGTD9R120F2WP is a high-power, fast-switching IGBT (Insulated Gate Bipolar Transistor) module designed for use in various technical solutions requiring efficient power control.

  2. What are the key specifications of the NGTD9R120F2WP?

    • The NGTD9R120F2WP features a voltage rating of 1200V, a current rating of 75A, and a low saturation voltage to enable high efficiency in power applications.

  3. In what technical solutions can the NGTD9R120F2WP be used?

    • The NGTD9R120F2WP is commonly used in motor drives, renewable energy systems, industrial power supplies, and welding equipment due to its high power handling capabilities.

  4. How does the NGTD9R120F2WP contribute to energy efficiency in technical solutions?

    • The NGTD9R120F2WP's low saturation voltage and fast-switching characteristics help minimize power losses, leading to improved energy efficiency in various applications.

  5. What cooling methods are recommended for the NGTD9R120F2WP?

    • To ensure optimal performance, the NGTD9R120F2WP typically requires effective thermal management through methods such as forced air cooling or liquid cooling in high-power applications.

  6. Are there any specific considerations for driving the NGTD9R120F2WP?

    • Proper gate drive circuitry and protection mechanisms should be implemented to ensure safe and reliable operation of the NGTD9R120F2WP in technical solutions.

  7. Can the NGTD9R120F2WP be paralleled for higher power applications?

    • Yes, the NGTD9R120F2WP can be paralleled with other modules to increase power handling capacity, but careful attention must be paid to current sharing and thermal management.

  8. What are the typical failure modes of the NGTD9R120F2WP and how can they be mitigated?

    • Common failure modes include overcurrent, overvoltage, and overheating. These can be mitigated through proper circuit protection, thermal design, and operating within specified limits.

  9. Does the NGTD9R120F2WP require any special considerations for EMI/EMC compliance?

    • Proper layout and filtering techniques should be employed to ensure that the NGTD9R120F2WP meets electromagnetic interference (EMI) and electromagnetic compatibility (EMC) requirements.

  10. Where can I find detailed application notes and reference designs for using the NGTD9R120F2WP in technical solutions?

    • Application notes and reference designs for the NGTD9R120F2WP can typically be found on the manufacturer's website or through authorized distributors, providing valuable guidance for successful integration into various applications.