2SA1419T-TD-E
Product Category: Transistor
Basic Information Overview: - Category: Bipolar Junction Transistor (BJT) - Use: Amplification and switching in electronic circuits - Characteristics: High current gain, low noise, and high frequency capability - Package: SOT-23, SMD package - Essence: NPN silicon epitaxial planar transistor - Packaging/Quantity: Available in reels of 3000 units
Specifications: - Collector-Base Voltage (VCBO): 50V - Collector-Emitter Voltage (VCEO): 50V - Emitter-Base Voltage (VEBO): 5V - Collector Current (IC): 100mA - Power Dissipation (PD): 150mW - Transition Frequency (fT): 250MHz - Operating Temperature Range: -55°C to +150°C
Detailed Pin Configuration: - Pin 1 (Emitter): Connects to the emitter region of the transistor - Pin 2 (Base): Connects to the base region of the transistor - Pin 3 (Collector): Connects to the collector region of the transistor
Functional Features: - High current gain (hFE) of 100 to 300 - Low noise performance suitable for audio applications - High-frequency capability for RF amplification
Advantages: - Small SMD package for space-constrained designs - Wide operating temperature range - Suitable for high-frequency applications
Disadvantages: - Limited maximum collector current compared to other transistors - Relatively low breakdown voltage
Working Principles: The 2SA1419T-TD-E operates based on the principles of bipolar junction transistors, utilizing the interaction between minority and majority charge carriers to amplify or switch electronic signals.
Detailed Application Field Plans: - Audio amplification in portable devices - RF amplification in communication systems - Switching applications in electronic control circuits
Detailed and Complete Alternative Models: - 2SC2712 - BC337 - 2N3904 - MMBT3904
This comprehensive entry provides a detailed overview of the 2SA1419T-TD-E transistor, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.
Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi 2SA1419T-TD-E dalam penyelesaian teknikal
What is the maximum collector current of 2SA1419T-TD-E?
- The maximum collector current of 2SA1419T-TD-E is 1.5A.
What is the maximum collector-emitter voltage of 2SA1419T-TD-E?
- The maximum collector-emitter voltage of 2SA1419T-TD-E is 160V.
What is the power dissipation of 2SA1419T-TD-E?
- The power dissipation of 2SA1419T-TD-E is 1.5W.
What are the typical applications of 2SA1419T-TD-E?
- 2SA1419T-TD-E is commonly used in audio amplification, driver stages of audio equipment, and general purpose switching applications.
What is the gain (hFE) of 2SA1419T-TD-E?
- The gain (hFE) of 2SA1419T-TD-E typically ranges from 60 to 320.
Is 2SA1419T-TD-E suitable for low noise amplifier applications?
- Yes, 2SA1419T-TD-E can be used in low noise amplifier applications due to its low noise characteristics.
Does 2SA1419T-TD-E require a heat sink for operation?
- It is recommended to use a heat sink when operating 2SA1419T-TD-E near its maximum power dissipation to ensure proper thermal management.
What are the temperature specifications for 2SA1419T-TD-E?
- The operating temperature range for 2SA1419T-TD-E is typically -55°C to 150°C.
Can 2SA1419T-TD-E be used in high-frequency applications?
- While 2SA1419T-TD-E is not specifically designed for high-frequency applications, it can be used in moderate frequency applications with appropriate circuit design.
Are there any known reliability issues with 2SA1419T-TD-E?
- 2SA1419T-TD-E is a reliable transistor when operated within its specified ratings and conditions. However, it is important to follow proper handling and mounting procedures to ensure long-term reliability.