Imej mungkin representasi.
Lihat spesifikasi untuk butiran produk.
2N7000G

2N7000G

Product Overview

The 2N7000G is a small-signal N-channel MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) belonging to the category of electronic components. It is commonly used in various electronic circuits for switching and amplification purposes due to its low power consumption, high input impedance, and fast switching speed. The 2N7000G is typically available in a TO-92 package and is widely used in applications such as voltage regulation, signal processing, and power management.

Specifications

  • Category: Electronic Components
  • Use: Switching and Amplification
  • Characteristics: Low Power Consumption, High Input Impedance, Fast Switching Speed
  • Package: TO-92
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Detailed Pin Configuration

The 2N7000G features three pins: Gate (G), Drain (D), and Source (S). The pin configuration is as follows: - Gate (G): Input terminal for controlling the flow of current through the transistor. - Drain (D): Output terminal where the current exits the transistor. - Source (S): Terminal connected to the ground reference point.

Functional Features

The 2N7000G offers the following functional features: - Low power consumption, making it suitable for battery-operated devices. - High input impedance, allowing for easy interfacing with other electronic components. - Fast switching speed, enabling rapid on/off transitions in electronic circuits.

Advantages and Disadvantages

Advantages: - Low power consumption - High input impedance - Fast switching speed

Disadvantages: - Limited power handling capability - Susceptible to damage from static electricity

Working Principles

The 2N7000G operates based on the principles of field-effect transistors, where the flow of current between the drain and source terminals is controlled by the voltage applied to the gate terminal. When a sufficient voltage is applied to the gate, it creates an electric field that modulates the conductivity of the channel between the drain and source, allowing for the control of current flow.

Detailed Application Field Plans

The 2N7000G finds extensive use in the following application fields: - Voltage Regulation Circuits - Signal Processing Systems - Power Management Modules - Audio Amplification Circuits - Sensor Interface Circuits

Detailed and Complete Alternative Models

Some alternative models to the 2N7000G include: - BS170 - IRF530 - FQP30N06L - IRL540

In conclusion, the 2N7000G is a versatile N-channel MOSFET with applications in various electronic circuits, offering low power consumption, high input impedance, and fast switching speed. Its compact TO-92 package and functional features make it a popular choice for designers and engineers in the electronics industry.

Word Count: 411

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi 2N7000G dalam penyelesaian teknikal

  1. What is the maximum drain current of 2N7000G?

    • The maximum drain current of 2N7000G is 200 mA.
  2. What is the typical threshold voltage of 2N7000G?

    • The typical threshold voltage of 2N7000G is 2.1 V.
  3. Can 2N7000G be used for low-power switching applications?

    • Yes, 2N7000G is suitable for low-power switching applications due to its low threshold voltage and moderate drain current capability.
  4. What is the maximum power dissipation of 2N7000G?

    • The maximum power dissipation of 2N7000G is 400 mW.
  5. Is 2N7000G suitable for use in voltage level shifting circuits?

    • Yes, 2N7000G can be used in voltage level shifting circuits due to its low threshold voltage and compatibility with various logic levels.
  6. What are the typical applications of 2N7000G in electronic circuits?

    • Typical applications of 2N7000G include signal switching, small-signal amplification, level shifting, and interface circuitry.
  7. Does 2N7000G require a heat sink for normal operation?

    • In most cases, 2N7000G does not require a heat sink for normal operation due to its moderate power dissipation.
  8. What is the maximum gate-source voltage for 2N7000G?

    • The maximum gate-source voltage for 2N7000G is ±20 V.
  9. Can 2N7000G be used in high-frequency applications?

    • While 2N7000G can be used in some high-frequency applications, it is more commonly employed in low to moderate frequency circuits.
  10. Are there any common failure modes or issues associated with 2N7000G?

    • Common failure modes for 2N7000G include exceeding the maximum ratings, improper static discharge handling, and excessive junction temperature. Proper design and handling can mitigate these issues.