2N5885G Transistor

Product Overview

Category:

The 2N5885G is a high-power NPN bipolar junction transistor (BJT).

Use:

It is commonly used in power amplifier and switching applications.

Characteristics:

• High power handling capability
• Low collector-emitter saturation voltage
• Fast switching speed

Package:

The 2N5885G is typically available in a TO-3 package.

Essence:

This transistor is essential for high-power electronic circuits and systems.

Packaging/Quantity:

The 2N5885G is usually sold individually or in small quantities, depending on the supplier.

Specifications

• Collector-Emitter Voltage (Vce): 80V
• Collector Current (Ic): 25A
• Power Dissipation (Pd): 200W
• Transition Frequency (ft): 4MHz
• Operating Temperature: -65°C to 200°C

Detailed Pin Configuration

The 2N5885G transistor has three pins: 1. Base (B) 2. Emitter (E) 3. Collector (C)

Functional Features

• High power amplification capability
• Fast switching for efficient power control
• Low saturation voltage for minimal power loss

Advantages

• High power handling capacity
• Suitable for high-frequency applications
• Low saturation voltage reduces power dissipation

Disadvantages

• Relatively large package size
• Limited operating temperature range compared to some modern transistors

Working Principles

The 2N5885G operates based on the principles of bipolar junction transistors, utilizing the flow of charge carriers to amplify and control electrical signals.

Detailed Application Field Plans

The 2N5885G is commonly used in the following applications: - Power amplifiers - Switching power supplies - Motor control systems - RF amplifiers

Detailed and Complete Alternative Models

Some alternative models to the 2N5885G include: - MJL4281A - MJE15030 - TIP35C - 2SC5200

In conclusion, the 2N5885G transistor is a high-power NPN BJT with excellent power handling capabilities, making it suitable for various high-power applications such as amplifiers and power supplies.

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