JAN1N4123DUR-1

Product Category

The JAN1N4123DUR-1 belongs to the category of semiconductor diodes.

Basic Information Overview

• Use: The JAN1N4123DUR-1 is used as a general-purpose silicon rectifier diode.
• Characteristics: It has high reliability, low forward voltage drop, and fast switching capability.
• Package: The diode is typically available in a DO-41 package.
• Essence: The essence of this diode lies in its ability to efficiently rectify alternating current (AC) to direct current (DC).
• Packaging/Quantity: It is commonly packaged in reels or tubes with varying quantities depending on the manufacturer's specifications.

Specifications

• Maximum Average Forward Current: 1A
• Peak Repetitive Reverse Voltage: 200V
• Forward Voltage Drop: 1V at 1A
• Reverse Recovery Time: 4ns

Detailed Pin Configuration

The JAN1N4123DUR-1 typically has two pins, an anode, and a cathode. The anode is connected to the positive terminal of the circuit, while the cathode is connected to the negative terminal.

Functional Features

• Efficiently converts AC to DC.
• Fast switching capability.
• High reliability.

Advantages and Disadvantages

Advantages

• Low forward voltage drop.
• High reliability.
• Fast switching capability.

Disadvantages

• Limited maximum average forward current.
• Relatively high reverse recovery time.

Working Principles

The working principle of the JAN1N4123DUR-1 is based on the formation of a depletion region at the junction between the P-type and N-type semiconductor materials. When a forward bias is applied, it allows current to flow, effectively converting AC to DC.

Detailed Application Field Plans

The JAN1N4123DUR-1 is widely used in power supply circuits, rectification circuits, and various electronic devices where efficient conversion of AC to DC is required. It finds applications in consumer electronics, industrial equipment, and automotive systems.

Detailed and Complete Alternative Models

• 1N4001: Similar characteristics and package, with a lower peak repetitive reverse voltage of 50V.
• 1N4007: Higher peak repetitive reverse voltage of 1000V, suitable for higher voltage applications.

In conclusion, the JAN1N4123DUR-1 semiconductor diode offers reliable and efficient rectification capabilities, making it a valuable component in various electronic circuits and devices.

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