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2N3867
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2N3867 Transistor

Introduction

The 2N3867 is a versatile transistor widely used in electronic circuits due to its high performance and reliability. This entry provides an overview of the 2N3867, including its product details, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Product Overview

  • Category: Bipolar Junction Transistor (BJT)
  • Use: Amplification and switching applications
  • Characteristics: High gain, low noise, and low power dissipation
  • Package: TO-39 metal can package
  • Essence: NPN silicon epitaxial planar transistor
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Maximum Power Dissipation: 300 mW
  • Collector-Base Voltage (Vcbo): 60 V
  • Collector-Emitter Voltage (Vceo): 30 V
  • Emitter-Base Voltage (Vebo): 5 V
  • Collector Current (Ic): 50 mA
  • DC Current Gain (hfe): 100 to 300
  • Transition Frequency (ft): 150 MHz

Pin Configuration

The 2N3867 transistor has three pins: 1. Collector (C): Connects to the positive supply voltage 2. Base (B): Input terminal for controlling the transistor action 3. Emitter (E): Connects to the ground or common reference point

Functional Features

  • High current gain allows for small base current to control large collector current
  • Low noise characteristics make it suitable for audio amplifier applications
  • Wide frequency response enables use in radio frequency (RF) circuits

Advantages and Disadvantages

Advantages

  • High gain and low noise make it suitable for low-level amplification
  • Compact TO-39 package allows for easy integration into circuit designs
  • Wide operating frequency range enables diverse application possibilities

Disadvantages

  • Limited maximum power dissipation may restrict use in high-power applications
  • Relatively low collector current rating compared to other transistors

Working Principles

The 2N3867 operates as a current-controlled switch or amplifier. When a small current flows into the base terminal, it controls a much larger current flowing between the collector and emitter terminals. This amplification effect forms the basis of its functionality in various electronic circuits.

Application Field Plans

The 2N3867 finds extensive use in the following applications: - Audio amplifiers - RF amplifiers - Oscillator circuits - Switching circuits - Signal processing circuits

Alternative Models

Several alternative transistors can be used as substitutes for the 2N3867, including: - BC547 - 2N2222 - 2N3904 - MPS2222A

In conclusion, the 2N3867 transistor offers high performance and versatility, making it a popular choice for amplification and switching applications across various electronic circuits.

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  1. What is the 2N3867 transistor used for?

    • The 2N3867 is a high-frequency NPN transistor commonly used in RF amplifier and oscillator circuits.

  2. What are the key specifications of the 2N3867 transistor?

    • The 2N3867 has a maximum collector current of 50mA, a maximum power dissipation of 300mW, and a transition frequency of 200MHz.

  3. How can I identify the pinout of the 2N3867 transistor?

    • The pinout of the 2N3867 transistor is typically Emitter (E), Base (B), and Collector (C).

  4. What are some common applications of the 2N3867 transistor?

    • The 2N3867 is often used in RF amplifiers, oscillators, and other high-frequency applications due to its high transition frequency.

  5. What are the typical operating conditions for the 2N3867 transistor?

    • The 2N3867 is typically operated at a collector-emitter voltage (Vce) of 15V and a collector current (Ic) of 10mA.

  6. Can the 2N3867 be used in low-frequency applications?

    • While the 2N3867 is optimized for high-frequency applications, it can still be used in low-frequency amplification with appropriate circuit design.

  7. What are the recommended biasing configurations for the 2N3867 transistor?

    • Common biasing configurations for the 2N3867 include fixed bias, emitter bias, and voltage-divider bias, depending on the specific application requirements.

  8. Are there any common pitfalls or challenges when using the 2N3867 transistor?

    • One common challenge is ensuring proper impedance matching in RF applications to maximize performance and stability.

  9. What are some suitable alternatives to the 2N3867 transistor?

    • Alternatives to the 2N3867 include transistors such as the 2N5109, 2N4427, and 2N5179, which offer similar high-frequency performance.

  10. Where can I find detailed datasheets and application notes for the 2N3867 transistor?

    • Datasheets and application notes for the 2N3867 can be found on semiconductor manufacturer websites, electronics component distributors, and technical documentation repositories.