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NAND04GW3C2BN6E

NAND04GW3C2BN6E

Product Overview

  • Category: Integrated Circuit (IC)
  • Use: NAND Flash Memory
  • Characteristics: High-density storage, non-volatile, fast read/write speeds
  • Package: BGA (Ball Grid Array)
  • Essence: Stores digital information in a non-volatile manner

Packaging/Quantity

  • The NAND04GW3C2BN6E is typically sold in reels or trays.
  • Reels contain 3000 units per reel.
  • Trays contain 100 units per tray.

Specifications

  • Capacity: 4 Gigabytes (GB)
  • Interface: Serial Peripheral Interface (SPI)
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Data Retention: Up to 10 years
  • Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The NAND04GW3C2BN6E has a total of 48 pins arranged as follows:

  1. VCC
  2. GND
  3. /CE (Chip Enable)
  4. /WP (Write Protect)
  5. /HOLD (Hold)
  6. IO0
  7. IO1
  8. IO2
  9. IO3
  10. IO4
  11. IO5
  12. IO6
  13. IO7
  14. NC (No Connection)
  15. NC
  16. NC
  17. NC
  18. NC
  19. NC
  20. NC
  21. NC
  22. NC
  23. NC
  24. NC
  25. NC
  26. NC
  27. NC
  28. NC
  29. NC
  30. NC
  31. NC
  32. NC
  33. NC
  34. NC
  35. NC
  36. NC
  37. NC
  38. NC
  39. NC
  40. NC
  41. NC
  42. NC
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. NC

Functional Features

  • High-speed data transfer: The NAND04GW3C2BN6E offers fast read and write speeds, making it suitable for applications that require quick access to large amounts of data.
  • Non-volatile storage: The NAND flash memory retains data even when power is removed, ensuring data integrity and reliability.
  • High-density storage: With a capacity of 4GB, the NAND04GW3C2BN6E provides ample space for storing large files and applications.
  • Low power consumption: The IC operates at low power levels, making it energy-efficient and suitable for battery-powered devices.

Advantages and Disadvantages

Advantages

  • High storage capacity
  • Fast read/write speeds
  • Non-volatile memory
  • Low power consumption

Disadvantages

  • Limited endurance (100,000 program/erase cycles)
  • Relatively high cost compared to other memory technologies

Working Principles

The NAND04GW3C2BN6E utilizes NAND flash memory technology to store digital information. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of data by varying the charge level on a floating gate. When reading or writing data, electrical signals are applied to specific pins to access and manipulate the stored information.

Detailed Application Field Plans

The NAND04GW3C2BN6E is commonly used in various electronic devices and systems, including:

  1. Solid-State Drives (SSDs)
  2. USB Flash Drives
  3. Memory Cards (SD, microSD, etc.)
  4. Embedded Systems
  5. Industrial Control Systems
  6. Automotive Infotainment Systems

Detailed and Complete Alternative Models

  1. NAND08GW3C2BN6E - 8GB capacity, same specifications as NAND04GW3C2BN6E
  2. NAND16GW3C2BN6E - 16GB capacity, same specifications as NAND04GW3C2BN6E
  3. NAND32GW3C2BN6E - 32GB capacity, same specifications as NAND04GW3C2BN6E
  4. NAND64GW3C2BN6E - 64GB capacity, same specifications as NAND04GW3C2BN6E

These alternative models offer higher storage capacities while maintaining the same specifications as the NAND04GW3C2BN6E.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi NAND04GW3C2BN6E dalam penyelesaian teknikal

Sure! Here are 10 common questions and answers related to the application of NAND04GW3C2BN6E in technical solutions:

  1. Q: What is NAND04GW3C2BN6E? A: NAND04GW3C2BN6E is a specific model of NAND flash memory chip manufactured by a particular company.

  2. Q: What is the storage capacity of NAND04GW3C2BN6E? A: NAND04GW3C2BN6E has a storage capacity of 4 gigabytes (GB).

  3. Q: What is the interface used by NAND04GW3C2BN6E? A: NAND04GW3C2BN6E uses a standard NAND flash interface for data transfer.

  4. Q: What are some typical applications of NAND04GW3C2BN6E? A: NAND04GW3C2BN6E is commonly used in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

  5. Q: What is the operating voltage range of NAND04GW3C2BN6E? A: NAND04GW3C2BN6E operates within a voltage range of typically 2.7V to 3.6V.

  6. Q: What is the maximum read and write speed of NAND04GW3C2BN6E? A: The read and write speeds of NAND04GW3C2BN6E can vary depending on the specific implementation, but it generally supports high-speed data transfer rates.

  7. Q: Can NAND04GW3C2BN6E be used as a boot device? A: Yes, NAND04GW3C2BN6E can be used as a boot device in certain systems that support booting from NAND flash memory.

  8. Q: Does NAND04GW3C2BN6E have built-in error correction capabilities? A: Yes, NAND04GW3C2BN6E typically includes built-in error correction codes (ECC) to ensure data integrity.

  9. Q: Can NAND04GW3C2BN6E be easily replaced or upgraded in a system? A: NAND04GW3C2BN6E can be replaced or upgraded, but it requires specialized tools and expertise due to its surface-mount form factor.

  10. Q: Is NAND04GW3C2BN6E compatible with different operating systems? A: Yes, NAND04GW3C2BN6E is compatible with various operating systems as long as the system supports the NAND flash interface.

Please note that the answers provided here are general and may vary depending on the specific implementation and requirements of the technical solution.