N25Q256A73ESF40F TR

Product Overview

Category

The N25Q256A73ESF40F TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic devices, such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The N25Q256A73ESF40F TR retains stored data even when power is removed.
• High capacity: With a storage capacity of 256 megabits (32 megabytes), it can accommodate large amounts of data.
• Fast read and write speeds: The device offers high-speed data transfer, enabling efficient data access and retrieval.
• Reliable performance: It provides reliable and consistent performance over an extended period of usage.

Package and Quantity

The N25Q256A73ESF40F TR is available in a small form factor package, making it suitable for space-constrained applications. It is typically sold in reels or trays, with varying quantities depending on the supplier's packaging specifications.

Specifications

• Memory Type: Flash
• Capacity: 256 megabits (32 megabytes)
• Interface: Serial Peripheral Interface (SPI)
• Operating Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 108 MHz (Fast Read mode)

Pin Configuration

The N25Q256A73ESF40F TR has a standard pin configuration, as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. HOLD: Suspends ongoing operations temporarily
4. WP: Write Protect pin
5. SIO0: Serial data input/output
6. SIO1: Serial data output
7. SIO2: Serial data input/output
8. SIO3: Serial data output
9. CS: Chip Select
10. CLK: Clock input

Functional Features

• Erase and Program Operations: The N25Q256A73ESF40F TR supports both sector and bulk erase operations, as well as programming of individual memory cells.
• Protection Mechanisms: It incorporates various hardware and software-based protection mechanisms to prevent unauthorized access or modification of stored data.
• Read and Write Performance: The device offers fast read and write speeds, enabling efficient data transfer between the memory and the host system.
• Error Correction: Built-in error correction algorithms ensure data integrity and reliability during read and write operations.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rates
• Reliable performance
• Small form factor package

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

The N25Q256A73ESF40F TR utilizes flash memory technology, which stores data in floating-gate transistors. These transistors can retain their charge even when power is removed, making them non-volatile. Data is written to the memory by applying voltage pulses to the appropriate memory cells, while reading involves sensing the charge state of the cells.

Application Field Plans

The N25Q256A73ESF40F TR finds applications in various electronic devices, including: - Computers and laptops - Smartphones and tablets - Networking equipment - Automotive systems - Industrial control systems - Consumer electronics

Alternative Models

1. N25Q128A13EF840E TR: A similar flash memory device with a lower capacity of 128 megabits (16 megabytes).
2. N25Q512A73EF840E TR: A higher-capacity alternative with 512 megabits (64 megabytes) of storage.
3. N25Q256A13EF840E TR: Another variant with the same capacity but different package and pin configuration.

These alternative models offer similar functionality but may differ in terms of capacity, package type, or pin configuration.

In conclusion, the N25Q256A73ESF40F TR is a high-capacity flash memory device that provides fast and reliable data storage for various electronic applications. Its small form factor, efficient performance, and protection mechanisms make it a suitable choice for many embedded systems and consumer electronics.