MT53D512M32D2NP-046 WT ES:D TR

Product Overview

Category

The MT53D512M32D2NP-046 WT ES:D TR belongs to the category of semiconductor memory devices.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data access
• Large storage capacity
• Low power consumption
• Compact package size

Package

The MT53D512M32D2NP-046 WT ES:D TR is packaged in a small form factor, typically a surface mount package (SMP), which allows for easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

The MT53D512M32D2NP-046 WT ES:D TR is typically sold in reels or trays, with each reel or tray containing a specific quantity of units. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Capacity: 512 megabits (Mb)
• Organization: 32M words x 16 bits
• Operating Voltage: 1.2V
• Clock Frequency: Up to 400 MHz
• Data Transfer Rate: Up to 3.2 gigabits per second (Gbps)
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT53D512M32D2NP-046 WT ES:D TR has a specific pin configuration that enables proper connection and communication with other components in an electronic system. The detailed pin configuration is as follows:

1. VDD: Power supply voltage
2. VSS: Ground reference
3. DQ0-DQ15: Data input/output pins
4. BA0-BA1: Bank address pins
5. A0-A11: Row/column address pins
6. RAS, CAS, WE: Control signals for row address strobe, column address strobe, and write enable
7. CK: Clock input
8. CKE: Clock enable
9. CS: Chip select
10. DM0-DM3: Data mask pins
11. DQS, DQS# : Data strobe signals
12. DQSN0-DQSN3: Data strobe signals (inverted)
13. ODT: On-die termination

Functional Features

The MT53D512M32D2NP-046 WT ES:D TR offers the following functional features:

1. High-speed data access: The product provides fast read and write operations, allowing for efficient data processing.
2. Large storage capacity: With a capacity of 512 megabits, it can store a significant amount of data.
3. Low power consumption: The product is designed to minimize power consumption, making it suitable for battery-powered devices.
4. Error correction: It incorporates error correction techniques to ensure data integrity.

Advantages and Disadvantages

Advantages

• High-speed data access enables quick data processing.
• Large storage capacity allows for ample data storage.
• Low power consumption prolongs battery life in portable devices.
• Error correction ensures data integrity.

Disadvantages

• Relatively higher cost compared to other memory technologies.
• Susceptible to data loss if not properly backed up or protected against power failures.

Working Principles

The MT53D512M32D2NP-046 WT ES:D TR operates based on the principles of dynamic random access memory (DRAM). It stores data as electrical charges in tiny capacitors within its memory cells. To read or write data, the memory controller sends appropriate signals to the memory module, activating specific rows and columns to access the desired data.

Detailed Application Field Plans

The MT53D512M32D2NP-046 WT ES:D TR finds applications in various electronic devices, including but not limited to:

1. Personal computers
2. Laptops and notebooks
3. Servers and data centers
4. Smartphones and tablets
5. Gaming consoles
6. Automotive electronics
7. Industrial control systems

Detailed and Complete Alternative Models

1. MT53B256M32D2NP-046 WT ES:D TR
2. MT53C512M32D2NP-046 WT ES:D TR
3. MT53E256M32D2NP-046 WT ES:D TR
4. MT53F512M32D2NP-046 WT ES:D TR
5. MT53G256M32D2NP-046 WT ES:D TR

These alternative models offer similar specifications and functionality to the MT53D512M32D2NP-046 WT ES:D TR, providing customers with a range of options based on their specific requirements.