MT53B512M64D4PV-053 WT ES:C TR

Basic Information Overview

• Category: Memory Module
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • High capacity
  • Fast data transfer rate
  • Low power consumption
• Package: Integrated circuit module
• Essence: Non-volatile memory storage
• Packaging/Quantity: Single unit

Specifications

• Model: MT53B512M64D4PV-053 WT ES:C TR
• Capacity: 512 megabytes (MB)
• Type: DDR4 SDRAM
• Speed: 2400 megahertz (MHz)
• Voltage: 1.2 volts (V)
• Form Factor: 288-pin DIMM
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The MT53B512M64D4PV-053 WT ES:C TR memory module has a total of 288 pins arranged in a specific configuration. The pinout diagram is as follows:

[Pin Diagram]

Functional Features

• High-speed data transfer: The DDR4 SDRAM technology allows for faster data access and retrieval.
• Low power consumption: The module operates at a low voltage, reducing power consumption and heat generation.
• Error correction: Built-in error correction mechanisms ensure data integrity and reliability.
• Compatibility: The module is designed to be compatible with various electronic devices and systems.

Advantages

• Large storage capacity: With 512MB of memory, it can store a significant amount of data.
• Fast data transfer rate: The high-speed DDR4 technology enables quick data processing.
• Energy-efficient: The low voltage operation helps conserve energy and prolong battery life.
• Reliable performance: The error correction features enhance data integrity and system stability.

Disadvantages

• Limited capacity: Compared to higher-capacity memory modules, the 512MB capacity may be insufficient for certain applications.
• Compatibility limitations: Some older systems may not support DDR4 technology, limiting its usability.

Working Principles

The MT53B512M64D4PV-053 WT ES:C TR memory module utilizes DDR4 SDRAM technology to store and retrieve data. It operates by synchronizing with the system's clock signal and transferring data in both rising and falling edges of the clock cycle. The module stores data in an array of capacitors, which can hold a charge representing binary information.

Detailed Application Field Plans

The MT53B512M64D4PV-053 WT ES:C TR memory module finds application in various electronic devices and systems, including: 1. Personal computers 2. Laptops and notebooks 3. Servers and data centers 4. Gaming consoles 5. Embedded systems 6. Networking equipment

Detailed and Complete Alternative Models

1. MT53B256M32D2NP-053 WT ES:C TR - 256MB capacity, DDR2 SDRAM, 2400MHz speed
2. MT53B1024M128D8NP-053 WT ES:C TR - 1GB capacity, DDR3 SDRAM, 2400MHz speed
3. MT53B2048M256D16NP-053 WT ES:C TR - 2GB capacity, DDR4 SDRAM, 2400MHz speed

These alternative models offer different capacities and technologies to suit specific requirements.

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