MT29F64G08AECDBJ4-6ITR:D TR

Product Overview

Category

The MT29F64G08AECDBJ4-6ITR:D TR belongs to the category of NAND flash memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F64G08AECDBJ4-6ITR:D TR offers a storage capacity of 64 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F64G08AECDBJ4-6ITR:D TR comes in a compact form factor, enabling easy integration into various devices.

Package and Quantity

This product is packaged in a small outline integrated circuit (SOIC) package. Each package contains one unit of the MT29F64G08AECDBJ4-6ITR:D TR NAND flash memory.

Specifications

• Memory type: NAND flash
• Storage capacity: 64 GB
• Interface: Serial Peripheral Interface (SPI)
• Supply voltage: 2.7V - 3.6V
• Operating temperature range: -40°C to +85°C
• Data transfer rate: Up to 100 megabytes per second (MB/s)
• Erase block size: 128 kilobytes (KB)
• Read/Write endurance: Up to 100,000 cycles

Detailed Pin Configuration

The MT29F64G08AECDBJ4-6ITR:D TR has the following pin configuration:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. CLE: Command latch enable
5. ALE: Address latch enable
6. RE: Read enable
7. WE: Write enable
8. R/B: Ready/busy status
9. DQ0-DQ7: Data input/output

Functional Features

• Page-level data programming and erase operations
• Block-level erase operations
• Error correction code (ECC) for data integrity
• Wear leveling algorithm to distribute write/erase cycles evenly across memory cells
• Bad block management for efficient use of available storage space

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate enables quick access to stored information.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• Limited endurance due to a finite number of write/erase cycles.
• Relatively higher cost compared to other types of memory.

Working Principles

The MT29F64G08AECDBJ4-6ITR:D TR NAND flash memory operates based on the principles of floating-gate transistors. It stores data by trapping electric charges in the floating gate, which alters the transistor's conductive properties. The presence or absence of charges determines the binary state of each memory cell, representing either a "0" or a "1". Data can be written by applying appropriate voltages to the control gates and erased by removing the trapped charges.

Detailed Application Field Plans

The MT29F64G08AECDBJ4-6ITR:D TR NAND flash memory finds applications in various fields, including: 1. Mobile devices: Smartphones, tablets, and portable media players. 2. Digital cameras: For storing high-resolution photos and videos. 3. Solid-state drives (SSDs): Used as primary storage in computers and laptops. 4. Automotive electronics: Infotainment systems, navigation units, and instrument clusters. 5. Industrial equipment: Embedded systems, data loggers, and control units.

Detailed and Complete Alternative Models

1. MT29F64G08CBABA
2. MT29F64G08CBACB
3. MT29F64G08CBADAWP
4. MT29F64G08CBADAWP-IT:D
5. MT29F64G08CBADAWP-IT:E

These alternative models offer similar specifications and functionality to the MT29F64G08AECDBJ4-6ITR:D TR NAND flash memory.

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