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MT29F64G08AECDBJ4-6IT:D TR

MT29F64G08AECDBJ4-6IT:D TR

Product Overview

Category

The MT29F64G08AECDBJ4-6IT:D TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity: The MT29F64G08AECDBJ4-6IT:D TR offers a storage capacity of 64 gigabytes (GB), allowing for ample data storage.
  • Fast data transfer rate: With its advanced architecture, this NAND flash memory provides high-speed data transfer, enabling quick access to stored information.
  • Reliable performance: The product is designed to deliver reliable performance, ensuring data integrity and durability.
  • Low power consumption: The MT29F64G08AECDBJ4-6IT:D TR is energy-efficient, consuming minimal power during operation.
  • Compact package: It comes in a compact package, making it suitable for integration into small-sized electronic devices.

Packaging/Quantity

The MT29F64G08AECDBJ4-6IT:D TR is typically packaged in a surface-mount technology (SMT) package. It is available in reels or trays, with varying quantities depending on customer requirements.

Specifications

  • Memory Type: NAND Flash
  • Capacity: 64 GB
  • Interface: Serial Peripheral Interface (SPI)
  • Supply Voltage: 2.7V - 3.6V
  • Operating Temperature Range: -40°C to +85°C
  • Package Type: Ball Grid Array (BGA)

Detailed Pin Configuration

The MT29F64G08AECDBJ4-6IT:D TR has a total of 48 pins. Here is a detailed pin configuration:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. CE#: Chip enable
  4. RE#: Read enable
  5. WE#: Write enable
  6. A0-A18: Address inputs
  7. DQ0-DQ7: Data input/output
  8. R/B#: Ready/busy status output
  9. CLE: Command latch enable
  10. ALE: Address latch enable
  11. WP#: Write protect
  12. RST#: Reset

(Note: The pin configuration may vary depending on the specific package variant.)

Functional Features

  • High-speed data transfer: The MT29F64G08AECDBJ4-6IT:D TR offers fast read and write speeds, facilitating efficient data storage and retrieval.
  • Error correction: It incorporates advanced error correction techniques to ensure data integrity and reliability.
  • Wear-leveling algorithm: This NAND flash memory utilizes wear-leveling algorithms to distribute data evenly across memory cells, extending the product's lifespan.
  • Bad block management: The device includes a bad block management system that identifies and manages defective blocks, enhancing overall performance.

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast data transfer rate
  • Reliable performance
  • Low power consumption
  • Compact package size

Disadvantages

  • Limited endurance: NAND flash memory has a finite number of program/erase cycles, which can affect its lifespan.
  • Higher cost per gigabyte compared to traditional hard disk drives (HDDs).

Working Principles

The MT29F64G08AECDBJ4-6IT:D TR operates based on the principles of NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge within it. When reading or writing data, the device applies voltage to specific cells to retrieve or modify the stored information.

Detailed Application Field Plans

The MT29F64G08AECDBJ4-6IT:D TR is widely used in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

  1. MT29F64G08CBABA: This model offers similar specifications and features as the MT29F64G08AECDBJ4-6IT:D TR but comes in a different package variant.
  2. MT29F64G08CBACB: Another alternative model with comparable specifications, but it may have a different pin configuration and package type.
  3. MT29F64G08CBADW: This model provides an alternative option with similar characteristics, but it may have variations in package size and pin layout.

(Note: The availability of alternative models may vary based on market conditions and specific requirements.)

In conclusion, the MT29F64G08AECDBJ4-6IT

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi MT29F64G08AECDBJ4-6IT:D TR dalam penyelesaian teknikal

1. What is the MT29F64G08AECDBJ4-6IT:D TR?

The MT29F64G08AECDBJ4-6IT:D TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

2. What is the storage capacity of the MT29F64G08AECDBJ4-6IT:D TR?

The MT29F64G08AECDBJ4-6IT:D TR has a storage capacity of 64 gigabits (8 gigabytes).

3. What is the interface used by the MT29F64G08AECDBJ4-6IT:D TR?

The MT29F64G08AECDBJ4-6IT:D TR uses a standard NAND flash interface.

4. What is the operating voltage range of the MT29F64G08AECDBJ4-6IT:D TR?

The MT29F64G08AECDBJ4-6IT:D TR operates at a voltage range of 2.7V to 3.6V.

5. What is the maximum data transfer rate of the MT29F64G08AECDBJ4-6IT:D TR?

The MT29F64G08AECDBJ4-6IT:D TR has a maximum data transfer rate of 166 megabytes per second.

6. Is the MT29F64G08AECDBJ4-6IT:D TR compatible with various operating systems?

Yes, the MT29F64G08AECDBJ4-6IT:D TR is compatible with various operating systems, including Windows, Linux, and macOS.

7. Can the MT29F64G08AECDBJ4-6IT:D TR be used in industrial applications?

Yes, the MT29F64G08AECDBJ4-6IT:D TR is designed for industrial applications and can withstand harsh operating conditions.

8. Does the MT29F64G08AECDBJ4-6IT:D TR support error correction codes (ECC)?

Yes, the MT29F64G08AECDBJ4-6IT:D TR supports built-in hardware ECC to ensure data integrity.

9. Can the MT29F64G08AECDBJ4-6IT:D TR be used in automotive applications?

Yes, the MT29F64G08AECDBJ4-6IT:D TR is suitable for automotive applications and meets the required specifications.

10. What is the expected lifespan of the MT29F64G08AECDBJ4-6IT:D TR?

The MT29F64G08AECDBJ4-6IT:D TR has a typical endurance of 3,000 program/erase cycles, ensuring long-term reliability.