MT29F512G08EEHAFJ4-3RES:A TR

Basic Information Overview

• Category: Memory Product
• Use: Data storage and retrieval
• Characteristics: High capacity, non-volatile, fast access speed
• Package: Integrated circuit (IC)
• Essence: Flash memory technology
• Packaging/Quantity: Varies based on customer requirements

Specifications

• Model: MT29F512G08EEHAFJ4-3RES:A TR
• Capacity: 512 gigabytes (GB)
• Interface: NAND Flash
• Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Speed: Up to 400 megabits per second (Mbps)

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground reference
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ15: Data input/output
8. R/B: Ready/busy status
9. CLE: Command latch enable
10. ALE: Address latch enable
11. WP: Write protect
12. RP: Reset pin

Functional Features

• High-density storage: Offers a large capacity of 512GB for data storage.
• Non-volatile memory: Retains data even when power is disconnected.
• Fast access speed: Allows for quick retrieval and transfer of data.
• Reliable performance: Built-in error correction mechanisms ensure data integrity.
• Low power consumption: Optimized power usage for extended battery life.

Advantages

• Large storage capacity enables handling of vast amounts of data.
• Non-volatile nature ensures data persistence without the need for power.
• Fast access speed facilitates efficient data retrieval and processing.
• Reliable performance safeguards against data corruption or loss.
• Low power consumption prolongs device battery life.

Disadvantages

• Relatively high cost compared to other memory options.
• Limited endurance due to the finite number of write/erase cycles.
• Requires specialized programming and control circuitry for proper operation.

Working Principles

MT29F512G08EEHAFJ4-3RES:A TR is based on NAND Flash memory technology. It utilizes a grid of memory cells, each capable of storing multiple bits of information. These cells are organized into pages, blocks, and planes, allowing for efficient data storage and retrieval. The memory cells are programmed and erased using electrical charges, which alter the state of the floating gate within each cell. This alteration determines whether the cell represents a "0" or a "1". The memory controller manages the reading, writing, and erasing operations, ensuring data integrity and optimal performance.

Detailed Application Field Plans

• Solid-state drives (SSDs): MT29F512G08EEHAFJ4-3RES:A TR can be used as the primary storage medium in SSDs, providing high-capacity and fast access storage for computers and servers.
• Embedded systems: The memory product can be integrated into various embedded systems, such as industrial automation, automotive electronics, and IoT devices, for reliable data storage and retrieval.
• Consumer electronics: Smartphones, tablets, and digital cameras can benefit from the large storage capacity and fast data transfer rates offered by MT29F512G08EEHAFJ4-3RES:A TR.

Detailed and Complete Alternative Models

• MT29F256G08CJAAA: Similar flash memory product with a lower capacity of 256GB.
• MT29F1T08EMJECB: Higher-capacity alternative with 1 terabyte (TB) storage.
• MT29F512G08CKCAB: Alternative model with different package and pin configuration, but similar specifications.

Note: The above alternative models are provided for reference and may not be an exhaustive list of available options.

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