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MT29F4G01ABAFD12-AATES:F

MT29F4G01ABAFD12-AATES:F

Product Overview

  • Category: Memory Device
  • Use: Data storage and retrieval
  • Characteristics:
    • Non-volatile memory
    • High capacity (4GB)
    • Fast read/write speeds
    • Low power consumption
  • Package: Advanced Thin Package (ATP)
  • Essence: Flash memory chip
  • Packaging/Quantity: Single chip per package

Specifications

  • Manufacturer: Micron Technology Inc.
  • Model Number: MT29F4G01ABAFD12-AATES:F
  • Memory Type: NAND Flash
  • Capacity: 4GB
  • Interface: Parallel
  • Operating Voltage: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Data Retention: Up to 10 years
  • Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The MT29F4G01ABAFD12-AATES:F has a total of 48 pins. The pin configuration is as follows:

  1. VCC
  2. A0
  3. A1
  4. A2
  5. A3
  6. A4
  7. A5
  8. A6
  9. A7
  10. A8
  11. A9
  12. A10
  13. A11
  14. A12
  15. A13
  16. A14
  17. A15
  18. A16
  19. A17
  20. A18
  21. A19
  22. A20
  23. A21
  24. A22
  25. A23
  26. A24
  27. ALE
  28. CLE
  29. RE#
  30. WE#
  31. WP#
  32. R/B#
  33. CE#
  34. VSS
  35. DQ0
  36. DQ1
  37. DQ2
  38. DQ3
  39. DQ4
  40. DQ5
  41. DQ6
  42. DQ7
  43. NC
  44. NC
  45. NC
  46. NC
  47. NC
  48. VCC

Functional Features

  • High-speed data transfer
  • Block erase and program operations
  • Error correction code (ECC) support
  • Wear-leveling algorithm for extended lifespan
  • Bad block management
  • Power-saving features

Advantages

  • Large storage capacity
  • Fast read/write speeds
  • Low power consumption
  • Reliable data retention
  • Wide operating temperature range
  • Advanced error correction capabilities

Disadvantages

  • Higher cost compared to other memory technologies
  • Limited endurance compared to some other non-volatile memory types

Working Principles

The MT29F4G01ABAFD12-AATES:F is based on NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density data storage. The memory cells are programmed and erased using electrical charges. When reading data, the stored charge is measured to determine the stored information.

Application Field Plans

The MT29F4G01ABAFD12-AATES:F is widely used in various electronic devices that require non-volatile data storage, such as:

  • Solid-state drives (SSDs)
  • USB flash drives
  • Digital cameras
  • Mobile phones
  • Tablets
  • Industrial control systems

Alternative Models

  • MT29F4G08ABADAWP:A
  • MT29F4G16ABADAWP:A
  • MT29F4G08ABADAH4:A
  • MT29F4G16ABADAH4:A

These alternative models offer similar specifications and functionality, but with different capacities or package options.

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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi MT29F4G01ABAFD12-AATES:F dalam penyelesaian teknikal

  1. Question: What is the capacity of the MT29F4G01ABAFD12-AATES:F memory module?
    Answer: The MT29F4G01ABAFD12-AATES:F has a capacity of 4 gigabytes (GB).

  2. Question: What is the interface used by the MT29F4G01ABAFD12-AATES:F?
    Answer: The MT29F4G01ABAFD12-AATES:F uses a NAND flash interface.

  3. Question: What is the operating voltage range for the MT29F4G01ABAFD12-AATES:F?
    Answer: The MT29F4G01ABAFD12-AATES:F operates at a voltage range of 2.7V to 3.6V.

  4. Question: What is the maximum data transfer rate supported by the MT29F4G01ABAFD12-AATES:F?
    Answer: The MT29F4G01ABAFD12-AATES:F supports a maximum data transfer rate of up to 52 megabytes per second (MB/s).

  5. Question: Is the MT29F4G01ABAFD12-AATES:F compatible with industrial temperature ranges?
    Answer: Yes, the MT29F4G01ABAFD12-AATES:F is designed to operate in industrial temperature ranges (-40°C to +85°C).

  6. Question: Does the MT29F4G01ABAFD12-AATES:F support wear-leveling algorithms?
    Answer: Yes, the MT29F4G01ABAFD12-AATES:F supports built-in wear-leveling algorithms to ensure even distribution of write/erase cycles across the memory cells.

  7. Question: Can the MT29F4G01ABAFD12-AATES:F be used in automotive applications?
    Answer: Yes, the MT29F4G01ABAFD12-AATES:F is suitable for automotive applications as it meets the required temperature and reliability standards.

  8. Question: What is the typical erase/program cycle endurance of the MT29F4G01ABAFD12-AATES:F?
    Answer: The MT29F4G01ABAFD12-AATES:F has a typical endurance of 100,000 erase/program cycles per block.

  9. Question: Does the MT29F4G01ABAFD12-AATES:F support hardware data protection features?
    Answer: Yes, the MT29F4G01ABAFD12-AATES:F supports hardware data protection features such as ECC (Error Correction Code) and bad block management.

  10. Question: Is the MT29F4G01ABAFD12-AATES:F RoHS compliant?
    Answer: Yes, the MT29F4G01ABAFD12-AATES:F is RoHS (Restriction of Hazardous Substances) compliant, ensuring it meets environmental regulations.