MT29F2G08ABAFAH4-IT:F

Product Overview

Category

MT29F2G08ABAFAH4-IT:F belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F2G08ABAFAH4-IT:F offers a storage capacity of 2 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable and consistent performance over extended periods.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F2G08ABAFAH4-IT:F comes in a small form factor, enabling its integration into compact electronic devices.
• RoHS compliant: It adheres to the Restriction of Hazardous Substances directive, ensuring environmental friendliness.

Package and Quantity

MT29F2G08ABAFAH4-IT:F is available in a surface-mount package. The exact package dimensions and pin configuration are detailed below. It is typically sold in reels or trays containing multiple units.

Specifications

• Storage Capacity: 2 GB
• Interface: NAND
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Erase/Program Cycles: Up to 100,000 cycles

Pin Configuration

The detailed pin configuration of MT29F2G08ABAFAH4-IT:F is as follows:

1. VCC
2. GND
3. A0
4. A1
5. A2
6. A3
7. A4
8. A5
9. A6
10. A7
11. A8
12. A9
13. A10
14. A11
15. A12
16. A13
17. A14
18. A15
19. A16
20. A17
21. A18
22. A19
23. A20
24. A21
25. A22
26. A23
27. CLE
28. ALE
29. RE#
30. WE#
31. WP#
32. R/B#
33. CE#
34. NC
35. NC
36. NC
37. NC
38. NC
39. NC
40. NC

Functional Features

• Page Read: Allows reading of data from a specific page.
• Page Program: Enables writing of data to a specific page.
• Block Erase: Facilitates erasing of entire blocks of data.
• Random Access: Provides random access to any memory location.
• Wear-Leveling: Implements wear-leveling algorithms to distribute write operations evenly across the memory cells, enhancing longevity.

Advantages and Disadvantages

Advantages

• High storage capacity for data-intensive applications.
• Fast data transfer rate improves overall system performance.
• Reliable performance ensures data integrity.
• Low power consumption prolongs battery life.
• RoHS compliance promotes environmental sustainability.

Disadvantages

• Limited erase/program cycles may affect long-term durability.
• Higher cost compared to other types of memory technologies.
• Susceptible to physical damage if mishandled or exposed to extreme conditions.

Working Principles

MT29F2G08ABAFAH4-IT:F utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on its floating gate. The memory cells are arranged in blocks, and each block consists of multiple pages.

To read data, the controller sends the appropriate address to select the desired page, and the stored data is retrieved. For writing data, the controller programs the selected page by applying the necessary voltage levels to modify the charge on the floating gate. Erasing data involves clearing an entire block by removing the charges from all the cells within that block.

Detailed Application Field Plans

MT29F2G08ABAFAH4-IT:F finds application in various electronic devices, including but not limited to: - Smartphones - Tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

For users seeking alternative options, the following NAND flash memory models can be considered: - MT29F2G16ABAEAWP-IT: Offers double the storage capacity (4 GB)