MT29F1T08EMHAFJ4-3R:A TR

Basic Information Overview

• Category: Memory chip
• Use: Data storage in electronic devices
• Characteristics:
  • Non-volatile memory
  • High storage capacity
  • Fast read and write speeds
• Package: Surface mount technology (SMT)
• Essence: NAND flash memory
• Packaging/Quantity: Tape and reel, 3000 pieces per reel

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Terabit (128 Gigabytes)
• Organization: 8 planes, 1024 blocks per plane, 128 pages per block
• Interface: Toggle Mode 2.0
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Retention: Up to 10 years

Detailed Pin Configuration

The MT29F1T08EMHAFJ4-3R:A TR has a total of 48 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | VCCQ | Power supply voltage for I/O | | 3 | GND | Ground | | 4 | RE# | Read enable input | | 5 | WE# | Write enable input | | 6 | CLE | Command latch enable input | | 7 | ALE | Address latch enable input | | 8-15 | A[0:7] | Address inputs | | 16-23 | A[8:15] | Address inputs | | 24-31 | A[16:23] | Address inputs | | 32-39 | A[24:31] | Address inputs | | 40-47 | DQ[0:7] | Data inputs/outputs |

Functional Features

• High-speed data transfer
• Error correction code (ECC) for data integrity
• Block management for wear leveling and bad block management
• Multi-plane operations for improved performance
• Power-saving features for low-power consumption

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Non-volatile memory retains data even when power is disconnected
• Reliable and durable
• Suitable for a wide range of electronic devices

Disadvantages

• Limited endurance compared to other types of memory
• Higher cost per gigabyte compared to traditional hard drives

Working Principles

The MT29F1T08EMHAFJ4-3R:A TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information, allowing for high-density storage. The data is written and read by applying electrical charges to the memory cells.

Detailed Application Field Plans

The MT29F1T08EMHAFJ4-3R:A TR is commonly used in various electronic devices, including: - Solid-state drives (SSDs) - USB flash drives - Memory cards for digital cameras and smartphones - Embedded systems - Industrial control systems

Detailed and Complete Alternative Models

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These alternative models offer similar specifications and functionality to the MT29F1T08EMHAFJ4-3R:A TR.

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