MT29F1T08EEHAFJ4-3TES:A

Basic Information Overview

• Category: Memory Device
• Use: Data storage and retrieval
• Characteristics:
  • Non-volatile
  • High capacity
  • Fast read/write speeds
• Package: Integrated Circuit (IC)
• Essence: Flash memory technology
• Packaging/Quantity: Varies based on manufacturer and customer requirements

Specifications

• Model: MT29F1T08EEHAFJ4-3TES:A
• Capacity: 1 Terabit (128 Gigabytes)
• Interface: Toggle NAND
• Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Speed: Up to 400 Megabytes per second (Read), up to 200 Megabytes per second (Write)

Detailed Pin Configuration

The MT29F1T08EEHAFJ4-3TES:A has a specific pin configuration for proper connectivity. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. CE#: Chip enable input
4. RE#: Read enable input
5. WE#: Write enable input
6. A0-A18: Address inputs
7. DQ0-DQ15: Data inputs/outputs
8. R/B#: Ready/busy output
9. CLE: Command latch enable input
10. ALE: Address latch enable input
11. WP#: Write protect input
12. RP#: Reset/power down input

Functional Features

• High-speed data transfer
• Reliable data retention
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan
• Block management for efficient use of memory space

Advantages

• Large storage capacity
• Fast read/write speeds
• Low power consumption
• Compact form factor
• High reliability and durability

Disadvantages

• Limited write endurance
• Higher cost compared to traditional storage devices
• Susceptible to data loss in case of power failure during write operations

Working Principles

The MT29F1T08EEHAFJ4-3TES:A utilizes flash memory technology, which is based on the principle of trapping electric charges within a floating gate. These trapped charges represent binary data (0s and 1s). The memory cells are organized into blocks, and each block consists of multiple pages. Data can be written to or read from these pages using specific commands and addresses.

Detailed Application Field Plans

The MT29F1T08EEHAFJ4-3TES:A finds applications in various fields, including: - Solid-state drives (SSDs) - Embedded systems - Consumer electronics (e.g., smartphones, tablets) - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models to the MT29F1T08EEHAFJ4-3TES:A include: - Samsung K9GAG08U0E - Micron MT29F1G08ABADAWP - Toshiba TH58NVG6D2FTA20

These models offer similar functionality and specifications, providing options for different project requirements.

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