MT29F1G08ABADAWP-E:D TR

Product Overview

Category

MT29F1G08ABADAWP-E:D TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

MT29F1G08ABADAWP-E:D TR is available in a small form factor package, making it suitable for integration into compact electronic devices.

Essence

The essence of MT29F1G08ABADAWP-E:D TR lies in its ability to store and retrieve large amounts of data reliably and efficiently.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of MT29F1G08ABADAWP-E:D TR units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Storage Capacity: 1GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 200MB/s (Read), Up to 100MB/s (Write)

Detailed Pin Configuration

The pin configuration of MT29F1G08ABADAWP-E:D TR is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. CE: Chip enable
4. RE: Read enable
5. WE: Write enable
6. A0-A18: Address inputs
7. DQ0-DQ7: Data inputs/outputs
8. R/B: Ready/busy status
9. CLE: Command latch enable
10. ALE: Address latch enable

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables erasing of data in block-sized units.
• Read Operation: Facilitates the retrieval of stored data.
• Wear-Leveling: Distributes write operations evenly across memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Compact size
• Low power consumption
• Suitable for various electronic devices

Disadvantages

• Limited endurance compared to other types of memory
• Relatively higher cost per gigabyte compared to traditional hard drives

Working Principles

MT29F1G08ABADAWP-E:D TR utilizes NAND flash memory technology, which stores data by trapping electrons in a floating gate. When a voltage is applied, the electrons are either trapped or released, representing binary values (0s and 1s). This allows for non-volatile data storage even when power is removed.

Detailed Application Field Plans

MT29F1G08ABADAWP-E:D TR finds applications in a wide range of electronic devices, including: - Smartphones - Tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT29F1G08ABADAWP-E:D TR include: - Samsung K9K8G08U0B - Micron MT29F1G08ABAEAWP - Toshiba TH58NVG6D2FLA89

These alternative models provide comparable storage capacities, interface compatibility, and performance characteristics.

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