MT29F1G01ABBFDWB-IT:F TR

Product Overview

Category

The MT29F1G01ABBFDWB-IT:F TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F1G01ABBFDWB-IT:F TR offers a storage capacity of 1 gigabit (1Gbit).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory ensures reliable data storage and retrieval.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: It comes in a small form factor, enabling integration into space-constrained electronic devices.

Package and Quantity

The MT29F1G01ABBFDWB-IT:F TR is packaged in a surface-mount technology (SMT) package. The quantity may vary depending on the manufacturer's specifications and customer requirements.

Specifications

• Storage Capacity: 1 Gbit
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second (MB/s)
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F1G01ABBFDWB-IT:F TR has a specific pin configuration that enables its proper functioning within a system. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. CE: Chip enable
3. CLE: Command latch enable
4. ALE: Address latch enable
5. RE: Read enable
6. WE: Write enable
7. R/B: Ready/busy status
8. DQ0-DQ7: Data input/output lines
9. NC: No connection (reserved)
10. VSS: Ground

Functional Features

• Page Program: The MT29F1G01ABBFDWB-IT:F TR supports page programming, allowing data to be written in small increments.
• Block Erase: It enables the erasure of large blocks of data, enhancing flexibility in managing storage space.
• Random Access: The product allows for random access to specific memory locations, facilitating efficient data retrieval.
• Error Correction Code (ECC): ECC functionality ensures data integrity by detecting and correcting errors during read operations.

Advantages and Disadvantages

Advantages

• High storage capacity meets the demands of modern data-intensive applications.
• Fast data transfer rate enhances overall system performance.
• Reliable performance ensures data integrity and longevity.
• Low power consumption prolongs battery life in portable devices.
• Compact package enables integration into space-constrained designs.

Disadvantages

• Limited endurance compared to other non-volatile memory technologies.
• Relatively higher cost per unit compared to alternative memory solutions.

Working Principles

The MT29F1G01ABBFDWB-IT:F TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using a combination of voltage levels. During write operations, data is programmed by applying specific voltages to the memory cells. Reading involves sensing the voltage levels stored in the cells to retrieve the stored data.

Detailed Application Field Plans

The MT29F1G01ABBFDWB-IT:F TR finds application in various electronic devices that require non-volatile data storage. Some potential application fields include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Provides storage for high-resolution photos and videos.
3. Solid-state drives (SSDs): Used as primary storage in computers and laptops, offering faster boot times and improved system responsiveness.

Detailed and Complete Alternative Models

• MT29F1G08ABBFDWB-IT:F TR: Offers a higher storage capacity of 8 gigabits (8Gbit).
• MT29F512G08CKCABH6-12ITZ:A: Provides a larger storage capacity of 512 gigabits (512Gbit) with advanced features.
• MT29F256G08AUCABH6-12ITZ:C: Offers a storage capacity of 256 gigabits (256Gbit) with enhanced performance characteristics.

Note: The above alternative models are provided for reference purposes and may have different specifications and pin configurations.

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