M29W128GSH70N6E

Product Overview

• Category: Memory chip
• Use: Data storage and retrieval in electronic devices
• Characteristics: High capacity, fast read/write speeds, non-volatile memory
• Package: Integrated circuit (IC) package
• Essence: Flash memory chip
• Packaging/Quantity: Typically sold individually or in bulk quantities

Specifications

• Model: M29W128GSH70N6E
• Capacity: 128 gigabits (16 gigabytes)
• Interface: Parallel
• Voltage: 3.3V
• Speed: 70 nanoseconds (ns)
• Technology: NAND flash memory
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The M29W128GSH70N6E chip has a specific pin configuration for proper integration into electronic devices. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. A0-A18: Address inputs
3. DQ0-DQ15: Data input/output lines
4. WE#: Write enable
5. CE#: Chip enable
6. OE#: Output enable
7. RP#/BYTE#: Reset/byte select
8. RY/BY#: Ready/busy status
9. WP#/ACC: Write protect/acceleration
10. VSS: Ground

Note: This is a simplified representation of the pin configuration. Refer to the product datasheet for a complete and accurate pinout diagram.

Functional Features

• High-speed data transfer: The M29W128GSH70N6E offers fast read and write speeds, allowing for efficient data storage and retrieval.
• Non-volatile memory: The chip retains stored data even when power is removed, ensuring data integrity and reliability.
• Large capacity: With a capacity of 128 gigabits, the chip provides ample storage space for various applications.
• Compatibility: The parallel interface makes it compatible with a wide range of electronic devices.

Advantages and Disadvantages

Advantages: - High capacity allows for extensive data storage - Fast read/write speeds enhance overall performance - Non-volatile memory ensures data integrity - Compatibility with various devices due to the parallel interface

Disadvantages: - Higher power consumption compared to some other memory technologies - Limited endurance in terms of write cycles

Working Principles

The M29W128GSH70N6E utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is measured to determine the binary value. The chip's internal controller manages the read, write, and erase operations.

Detailed Application Field Plans

The M29W128GSH70N6E chip finds application in various electronic devices that require high-capacity, non-volatile memory. Some potential application fields include:

1. Solid-state drives (SSDs)
2. Digital cameras
3. Mobile phones
4. Tablets
5. Gaming consoles
6. Industrial control systems

Detailed and Complete Alternative Models

1. M29W128GSH70N6F
2. M29W128GSH70N6D
3. M29W128GSH70N6C
4. M29W128GSH70N6B
5. M29W128GSH70N6A

These alternative models offer similar specifications and functionality to the M29W128GSH70N6E, providing options for different requirements and preferences.

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