M29F800DB70N6T TR

Product Overview

Category

The M29F800DB70N6T TR belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving data in electronic systems, such as microcontrollers, embedded systems, and other digital devices.

Characteristics

• Non-volatile: The M29F800DB70N6T TR retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 8 megabits (1 megabyte).
• Fast access time: It offers quick read and write operations, ensuring efficient data transfer.
• Low power consumption: The M29F800DB70N6T TR is designed to consume minimal power during operation.
• Wide temperature range: It can operate reliably within a wide temperature range, making it suitable for various environments.

Package

The M29F800DB70N6T TR is available in a surface mount package, which facilitates easy integration into circuit boards.

Essence

This memory device is essential for storing program code, data, and configuration settings in electronic systems, enabling them to retain information even when powered off.

Packaging/Quantity

The M29F800DB70N6T TR is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of devices. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Type: Flash
• Capacity: 8 Megabits (1 Megabyte)
• Organization: 1M x 8
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 ns
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP-48

Detailed Pin Configuration

The M29F800DB70N6T TR has a total of 48 pins, which are assigned specific functions. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. CE - Chip Enable Input
18. OE - Output Enable Input
19. WE - Write Enable Input
20. BYTE - Byte/Word Organization Input
21. VCC - Power Supply
22. DQ0 - Data Input/Output
23. DQ1 - Data Input/Output
24. DQ2 - Data Input/Output
25. DQ3 - Data Input/Output
26. DQ4 - Data Input/Output
27. DQ5 - Data Input/Output
28. DQ6 - Data Input/Output
29. DQ7 - Data Input/Output
30. RY/BY# - Ready/Busy Output
31. RESET# - Reset Input
32. WP# - Write Protect Input
33. VSS - Ground 34-37. NC - No Connection
34. RP - Reserved for Product Identification 39-46. NC - No Connection
35. VPP - Programming Voltage
36. NC - No Connection

Functional Features

The M29F800DB70N6T TR offers the following functional features:

• High-speed read and write operations
• Sector erase capability for efficient data management
• Automatic program and erase algorithms
• Hardware and software protection mechanisms
• Low power consumption during standby mode
• Reliable data retention for extended periods

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even without power.
• High storage capacity allows for storing large amounts of data.
• Fast access time enables quick retrieval and modification of stored information.
• Wide temperature range makes it suitable for various operating environments.

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles.
• Relatively higher cost compared to other types of memory.
• Larger physical size compared to newer memory technologies.

Working Principles

The M29F800DB70N6T TR is based on flash memory technology. It utilizes floating-gate transistors to store and retrieve data. When data is written, electrons are trapped in the floating gate, altering the transistor's behavior. To read the data, the transistor's behavior is analyzed by applying appropriate voltages. The M29F800