M29F200BT70N6E

Product Overview

Category: Integrated Circuit (IC)

Use: The M29F200BT70N6E is a flash memory IC that is commonly used in electronic devices for data storage and retrieval purposes. It provides non-volatile memory storage, allowing information to be retained even when power is removed.

Characteristics: - High storage capacity - Fast read and write speeds - Low power consumption - Durable and reliable - Compact package size

Package: The M29F200BT70N6E is available in a standard 48-pin TSOP (Thin Small Outline Package) format. This package offers a compact design, making it suitable for space-constrained applications.

Essence: The essence of the M29F200BT70N6E lies in its ability to provide reliable and high-capacity storage for electronic devices. It allows for efficient data management and enables seamless operation of various applications.

Packaging/Quantity: The M29F200BT70N6E is typically sold in reels or trays, with each reel or tray containing a specific quantity of ICs. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Memory Capacity: 2 Megabits (256 Kilobytes)
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Access Time: 70 nanoseconds
• Erase/Program Cycle Endurance: 100,000 cycles

Detailed Pin Configuration

The M29F200BT70N6E features a 48-pin TSOP package with the following pin configuration:

1. VCC - Power supply voltage
2. A0-A16 - Address inputs
3. CE - Chip enable
4. OE - Output enable
5. WE - Write enable
6. I/O0-I/O7 - Data input/output
7. RESET - Reset pin
8. WP - Write protect
9. RY/BY# - Ready/Busy output
10. VSS - Ground

(Note: The remaining pins are not listed here for brevity.)

Functional Features

• High-speed data transfer: The M29F200BT70N6E offers fast read and write speeds, allowing for efficient data transfer between the IC and the device it is used in.
• Low power consumption: This flash memory IC is designed to minimize power consumption, making it suitable for battery-powered devices.
• Reliable data retention: The M29F200BT70N6E ensures reliable data retention even in harsh environmental conditions, thanks to its durable construction and advanced memory management techniques.

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access times - Low power consumption - Compact package size - High endurance

Disadvantages: - Limited erase/program cycle endurance (100,000 cycles) - Relatively higher cost compared to other memory technologies

Working Principles

The M29F200BT70N6E utilizes a floating-gate transistor technology to store and retrieve data. It employs a combination of electrical charges to represent binary information (0s and 1s). When data is written, an electric charge is trapped in the floating gate, altering the transistor's behavior. This charge can be later detected and interpreted as stored data during read operations.

Detailed Application Field Plans

The M29F200BT70N6E is widely used in various electronic devices and applications, including but not limited to: - Personal computers - Mobile phones - Digital cameras - Automotive electronics - Industrial control systems - Consumer electronics

Its high storage capacity, fast access times, and reliability make it suitable for applications that require efficient data storage and retrieval.

Detailed and Complete Alternative Models

• M29F200B5 - Similar flash memory IC with a different package type (TSOP)
• M29F200BB - Flash memory IC with a larger storage capacity (4 Megabits)
• M29F400BT - Flash memory IC with double the storage capacity (4 Megabits)

These alternative models offer similar functionality to the M29F200BT70N6E but may differ in terms of package type, storage capacity, or other specifications.

In conclusion, the M29F200BT70N6E is a versatile flash memory IC that provides reliable and high-capacity storage for a wide range of electronic devices. Its fast access times, low power consumption, and compact package size make it an ideal choice for various applications.