M29F080D70N6E

Basic Information Overview

• Category: Integrated Circuit (IC)
• Use: Non-volatile Memory
• Characteristics: Flash Memory, 8 Megabit (1 Megabyte), 5V Supply Voltage, 70ns Access Time
• Package: 48-pin TSOP (Thin Small Outline Package)
• Essence: High-density, low-power, non-volatile memory solution
• Packaging/Quantity: Tape and Reel, 250 units per reel

Specifications

• Memory Type: NOR Flash
• Memory Size: 8 Megabit (1 Megabyte)
• Supply Voltage: 5V
• Access Time: 70ns
• Organization: 1M x 8 bits
• Interface: Parallel
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycles: 100,000 cycles
• Data Retention: 20 years

Detailed Pin Configuration

The M29F080D70N6E has a total of 48 pins. The pin configuration is as follows:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. VSS - Ground
10. A8 - Address Input
11. A9 - Address Input
12. A10 - Address Input
13. A11 - Address Input
14. A12 - Address Input
15. A13 - Address Input
16. A14 - Address Input
17. A15 - Address Input
18. VCC - Power Supply
19. DQ0 - Data Input/Output
20. DQ1 - Data Input/Output
21. DQ2 - Data Input/Output
22. DQ3 - Data Input/Output
23. DQ4 - Data Input/Output
24. DQ5 - Data Input/Output
25. DQ6 - Data Input/Output
26. DQ7 - Data Input/Output
27. WE# - Write Enable
28. CE# - Chip Enable
29. OE# - Output Enable
30. BYTE# - Byte Enable
31. VPP - Programming Voltage
32. RP# - Ready/Busy Output
33. NC - No Connection
34. NC - No Connection
35. NC - No Connection
36. NC - No Connection
37. NC - No Connection
38. NC - No Connection
39. NC - No Connection
40. NC - No Connection
41. NC - No Connection
42. NC - No Connection
43. NC - No Connection
44. NC - No Connection
45. NC - No Connection
46. NC - No Connection
47. NC - No Connection
48. NC - No Connection

Functional Features

• High-density non-volatile memory solution
• Fast access time of 70ns
• Low power consumption
• Easy integration into existing systems
• Reliable data retention for up to 20 years
• Wide operating temperature range (-40°C to +85°C)
• Support for 100,000 erase/program cycles

Advantages and Disadvantages

Advantages: - High storage capacity (8 Megabit) - Fast access time (70ns) - Low power consumption - Long data retention period (20 years) - Wide operating temperature range - Easy integration into existing systems

Disadvantages: - Limited erase/program cycles (100,000 cycles)

Working Principles

The M29F080D70N6E is a NOR flash memory IC. It stores data using a floating-gate transistor structure, which allows the memory to retain information even when power is removed. The IC can be programmed and erased electrically, making it suitable for applications that require non-volatile storage. The address inputs are used to select specific memory locations, while the data inputs/outputs allow for reading from and writing to the memory. The various control signals (WE#, CE#, OE#, BYTE#) enable different operations such as write enable, chip enable, output enable, and byte enable.

Detailed Application Field Plans

The M29F080D70N6E is commonly used in various electronic devices and systems that require non-volatile memory storage. Some of the application fields where this IC can be utilized include: - Embedded systems - Automotive electronics - Industrial control systems - Consumer electronics - Communication equipment

Detailed and Complete Alternative Models

• M29F080D70N1E: Same specifications but with 100ns access time
• M29F080D70N2E: Same specifications but with 120ns access time