M29F080D70N6

Product Overview

Category

M29F080D70N6 belongs to the category of non-volatile memory devices.

Use

This product is primarily used for data storage in various electronic devices such as computers, smartphones, and embedded systems.

Characteristics

• Non-volatile: The M29F080D70N6 retains stored data even when power is removed.
• High capacity: This device has a storage capacity of 8 megabits (1 megabyte).
• Fast access time: It offers quick read and write operations, ensuring efficient data transfer.
• Reliable: The M29F080D70N6 is designed to withstand harsh environmental conditions and has a long lifespan.

Package

The M29F080D70N6 comes in a standard integrated circuit (IC) package, which ensures easy integration into electronic circuits.

Essence

The essence of the M29F080D70N6 lies in its ability to provide reliable and high-capacity non-volatile memory storage for electronic devices.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of M29F080D70N6 devices. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 8 Megabits (1 Megabyte)
• Supply Voltage: 2.7V - 3.6V
• Access Time: 70 nanoseconds
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel

Detailed Pin Configuration

The M29F080D70N6 has a total of 32 pins, each serving a specific purpose. Here is a detailed pin configuration:

1. A0-A18: Address Inputs
2. DQ0-DQ7: Data Inputs/Outputs
3. CE: Chip Enable
4. OE: Output Enable
5. WE: Write Enable
6. VCC: Power Supply
7. GND: Ground

Functional Features

• Erase and Program Operations: The M29F080D70N6 supports both sector erase and byte program operations, allowing for flexible data manipulation.
• Automatic Page Write: This feature enables efficient programming of multiple bytes in a single operation, reducing write time.
• Hardware Data Protection: The device includes hardware protection mechanisms to prevent accidental erasure or modification of stored data.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast access time
• Non-volatile memory
• Reliable performance
• Flexible erase and program operations

Disadvantages

• Limited compatibility with certain older systems that do not support parallel interfaces
• Relatively higher power consumption compared to some newer memory technologies

Working Principles

The M29F080D70N6 utilizes flash memory technology to store data. It consists of a grid of memory cells, where each cell can store a binary value (0 or 1). These cells are organized into sectors, which can be individually erased or programmed. When data is written, the memory cells are electrically charged or discharged to represent the desired information. During read operations, the stored charges are detected and converted back into digital data.

Detailed Application Field Plans

The M29F080D70N6 finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Smartphones and tablets - Automotive electronics - Industrial control systems - Medical devices - Consumer electronics

Detailed and Complete Alternative Models

Here are some alternative models that offer similar functionality to the M29F080D70N6: - M29F080A - M29F080B - M29F080C - M29F080E

These alternative models are produced by the same manufacturer and provide comparable features and specifications.

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