AT49BV040-12JC

Product Overview

Category

AT49BV040-12JC belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing data in electronic systems, such as microcontrollers and embedded systems.

Characteristics

• Non-volatile: Retains data even when power is turned off.
• High storage capacity: The AT49BV040-12JC has a storage capacity of 4 megabits (512 kilobytes).
• Fast access time: It has a fast access time of 120 nanoseconds.
• Low power consumption: The device operates on low power, making it suitable for battery-powered applications.

Package

The AT49BV040-12JC is available in a 32-pin PLCC (Plastic Leaded Chip Carrier) package.

Essence

The essence of AT49BV040-12JC lies in its ability to provide reliable and non-volatile storage for electronic systems.

Packaging/Quantity

The device is typically packaged in reels or tubes, with quantities varying based on customer requirements.

Specifications

• Memory Type: Flash
• Organization: 512K x 8 bits
• Voltage Range: 2.7V - 3.6V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C
• Erase/Program Cycle Endurance: 10,000 cycles

Detailed Pin Configuration

The AT49BV040-12JC has a total of 32 pins. Here is the detailed pin configuration:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. CE# - Chip Enable Input
18. OE# - Output Enable Input
19. WE# - Write Enable Input
20. RESET# - Reset Input
21. BYTE# - Byte/Word Organization Select Input
22. VCC - Power Supply
23. DQ0 - Data Input/Output
24. DQ1 - Data Input/Output
25. DQ2 - Data Input/Output
26. DQ3 - Data Input/Output
27. DQ4 - Data Input/Output
28. DQ5 - Data Input/Output
29. DQ6 - Data Input/Output
30. DQ7 - Data Input/Output
31. GND - Ground
32. NC - No Connection

Functional Features

• High-speed data transfer: The AT49BV040-12JC supports fast data transfer rates, allowing for efficient read and write operations.
• Sector erase capability: It provides the ability to erase specific sectors of the memory, enabling selective data modification.
• Built-in protection mechanisms: The device incorporates various protection features, such as program and erase lockout, to prevent accidental data corruption.

Advantages and Disadvantages

Advantages

• Non-volatile storage: Data is retained even without power, ensuring data integrity.
• High storage capacity: The 4 megabit capacity allows for ample data storage.
• Fast access time: The device offers quick access to stored data.
• Low power consumption: It operates on low power, making it suitable for battery-powered applications.

Disadvantages

• Limited erase/write cycles: The AT49BV040-12JC has a limited endurance of 10,000 erase/write cycles.
• Relatively small storage capacity: Compared to other memory devices, the 4 megabit capacity may be insufficient for certain applications.

Working Principles

The AT49BV040-12JC utilizes flash memory technology to store and retrieve data. It employs a combination of floating-gate transistors and charge storage mechanisms to retain data even when power is turned off. The device uses address inputs to access specific memory locations and supports various control signals for read, write, and erase operations.

Detailed Application Field Plans

The AT49BV040-12JC finds application in various electronic systems, including but not limited to: - Microcontrollers - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

1. AT49BV040B-12JC: Similar to AT49BV040-12JC with improved performance characteristics.
2. AT49BV080-12JC: Double the storage capacity of AT49BV040-12JC (8