AT29BV010A-12TU-T

Product Overview

Category

AT29BV010A-12TU-T belongs to the category of non-volatile memory devices.

Use

This product is primarily used for storing and retrieving digital information in electronic systems.

Characteristics

• Non-volatile: The stored data is retained even when power is removed.
• High density: Offers a large storage capacity.
• Fast access time: Allows for quick retrieval of data.
• Low power consumption: Operates efficiently with minimal power requirements.

Package

AT29BV010A-12TU-T is available in a compact surface mount package.

Essence

The essence of this product lies in its ability to provide reliable and persistent storage of digital data in various electronic applications.

Packaging/Quantity

AT29BV010A-12TU-T is typically packaged in reels or tubes, with each containing a specific quantity of devices. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Part Number: AT29BV010A-12TU-T
• Memory Type: Flash
• Organization: 128K x 8
• Voltage Range: 2.7V - 3.6V
• Access Time: 120 ns
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VCC: Power supply voltage
2. A0-A16: Address inputs
3. CE: Chip enable
4. OE: Output enable
5. WE: Write enable
6. I/O0-I/O7: Data input/output lines
7. RY/BY: Ready/Busy output
8. NC: No connection (reserved)

Functional Features

• Byte-wide operations: Supports both read and write operations at the byte level.
• Sector erase capability: Allows for erasing specific sectors of the memory.
• Automatic write timing: Simplifies the write operation by automatically handling the required timing.
• Data protection: Provides hardware and software methods to protect stored data from accidental modification.

Advantages

• Non-volatile nature ensures data retention even during power loss.
• High-density storage capacity meets the demands of modern electronic systems.
• Fast access time enables quick retrieval of information.
• Low power consumption prolongs battery life in portable devices.

Disadvantages

• Limited endurance: Flash memory has a finite number of erase/write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory technologies.
• Susceptible to data corruption in case of unexpected power interruptions during write operations.

Working Principles

AT29BV010A-12TU-T utilizes flash memory technology, which is based on the principle of trapping electrical charges within floating gate transistors. These trapped charges represent binary data (0 or 1) and can be read or modified as needed. The memory cells are organized into sectors, allowing for efficient erasure and programming operations.

Detailed Application Field Plans

AT29BV010A-12TU-T finds applications in various electronic systems, including but not limited to: - Consumer electronics - Automotive electronics - Industrial control systems - Communication devices - Medical equipment

Detailed and Complete Alternative Models

• AT29BV010A-15JC
• AT29BV010A-20JC
• AT29BV010A-25JC
• AT29BV010A-30JC

These alternative models offer different access times and temperature ranges, providing flexibility to suit specific application requirements.

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