AT28BV64B-25SI

Product Overview

Category

AT28BV64B-25SI belongs to the category of non-volatile memory devices.

Use

It is primarily used for storing and retrieving data in electronic systems.

Characteristics

• Non-volatile: The data stored in AT28BV64B-25SI is retained even when power is removed.
• High capacity: It has a storage capacity of 64 kilobits (8 kilobytes).
• Fast access time: The device offers a fast access time of 250 nanoseconds.
• Low power consumption: AT28BV64B-25SI operates on low power, making it suitable for battery-powered devices.

Package

The AT28BV64B-25SI is available in a small outline integrated circuit (SOIC) package.

Essence

The essence of AT28BV64B-25SI lies in its ability to provide reliable and non-volatile data storage in various electronic applications.

Packaging/Quantity

The device is typically packaged in reels or tubes, with each reel or tube containing a specific quantity of AT28BV64B-25SI chips.

Specifications

• Memory Type: EEPROM (Electrically Erasable Programmable Read-Only Memory)
• Organization: 8K x 8 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: 10 years
• Endurance: 100,000 write cycles

Detailed Pin Configuration

The AT28BV64B-25SI has a total of 28 pins. Here is the detailed pin configuration:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. VCC - Power Supply
10. CE - Chip Enable
11. OE - Output Enable
12. WE - Write Enable
13. I/O0 - Data Input/Output
14. I/O1 - Data Input/Output
15. I/O2 - Data Input/Output
16. I/O3 - Data Input/Output
17. I/O4 - Data Input/Output
18. I/O5 - Data Input/Output
19. I/O6 - Data Input/Output
20. I/O7 - Data Input/Output
21. NC - No Connection
22. GND - Ground
23. NC - No Connection
24. NC - No Connection
25. NC - No Connection
26. NC - No Connection
27. NC - No Connection
28. NC - No Connection

Functional Features

• Byte-wise Read and Write: AT28BV64B-25SI allows reading and writing data in individual bytes.
• Page Write Mode: It supports fast programming of up to 32 bytes at a time.
• Software Data Protection: The device provides software-controlled protection against accidental erasure or modification of data.
• Hardware Data Protection: AT28BV64B-25SI features a hardware protection pin that can be used to prevent any write or erase operations.

Advantages and Disadvantages

Advantages

• Non-volatile memory ensures data retention even during power loss.
• High storage capacity for various applications.
• Fast access time enables quick data retrieval.
• Low power consumption extends battery life in portable devices.

Disadvantages

• Limited endurance compared to other types of memory.
• Relatively higher cost per bit compared to volatile memory.

Working Principles

AT28BV64B-25SI is based on EEPROM technology, which allows for electrically erasing and reprogramming data. It utilizes a grid of floating-gate transistors to store information. When data needs to be written, the appropriate address is selected, and the desired data is applied to the input pins. The device then uses electrical signals to modify the charge stored in the floating gates, effectively programming the data. Reading data involves selecting the desired address and enabling the output pins to retrieve the stored information.

Detailed Application Field Plans

AT28BV64B-25SI finds applications in various electronic systems, including but not limited to: - Embedded systems - Consumer electronics - Automotive electronics - Industrial control systems - Medical devices

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to AT28BV64B-25SI are: - AT28C64B-25SI: Similar specifications with a different package type. - AT28HC64B-25SI: High-speed version with faster access time. - AT28LV64B-25SI: Low-voltage variant suitable for specific power requirements.

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