AT24C16C-MAHM-T

Product Overview

Category

AT24C16C-MAHM-T belongs to the category of electrically erasable programmable read-only memory (EEPROM) chips.

Use

This product is primarily used for non-volatile data storage in various electronic devices such as microcontrollers, computers, and consumer electronics.

Characteristics

• Electrically erasable: The AT24C16C-MAHM-T can be erased and reprogrammed electronically, making it convenient for data updates.
• Non-volatile: The stored data remains intact even when power is disconnected.
• High storage capacity: This chip has a capacity of 16 kilobits, allowing for ample data storage.
• Low power consumption: The AT24C16C-MAHM-T operates on low power, making it suitable for battery-powered devices.

Package

The AT24C16C-MAHM-T is available in an 8-pin SOP (Small Outline Package) format.

Essence

The essence of this product lies in its ability to provide reliable and non-volatile data storage in a compact form factor.

Packaging/Quantity

The AT24C16C-MAHM-T is typically packaged in reels, with each reel containing a specified quantity of chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Capacity: 16 kilobits (2 kilobytes)
• Interface: I2C (Inter-Integrated Circuit)
• Operating Voltage: 1.7V to 5.5V
• Operating Temperature Range: -40°C to +85°C
• Write Cycle Endurance: 1 million cycles
• Data Retention: 100 years

Detailed Pin Configuration

The AT24C16C-MAHM-T features the following pin configuration:

1. A0: Address Input
2. A1: Address Input
3. A2: Address Input
4. GND: Ground
5. SDA: Serial Data Input/Output
6. SCL: Serial Clock Input
7. WP: Write Protect
8. VCC: Power Supply

Functional Features

• Random Access: The AT24C16C-MAHM-T allows for random access to any memory location, enabling efficient data retrieval.
• Byte-Level Read/Write: Data can be read from or written to the chip at the byte level, providing flexibility in data manipulation.
• Hardware Write Protection: The WP pin can be used to protect the stored data from accidental overwriting.
• Sequential Read: This chip supports sequential read operations, allowing for faster data retrieval.

Advantages and Disadvantages

Advantages

• High storage capacity for its compact size
• Low power consumption
• Reliable and non-volatile data storage
• Easy integration with I2C interface
• Cost-effective solution for data storage needs

Disadvantages

• Limited write cycle endurance compared to other memory technologies
• Slower write speed compared to volatile memory options

Working Principles

The AT24C16C-MAHM-T utilizes electrically erasable programmable read-only memory (EEPROM) technology. It stores data by trapping electric charges within a floating gate transistor structure. When data needs to be written or erased, an electrical charge is applied to the specific memory cells, altering their state.

During read operations, the stored charges are detected, allowing the retrieval of the stored data. The I2C interface facilitates communication between the AT24C16C-MAHM-T and the host device, enabling seamless data transfer.

Detailed Application Field Plans

The AT24C16C-MAHM-T finds applications in various fields, including:

1. Embedded Systems: Used for storing configuration data, firmware updates, and calibration parameters in microcontrollers and embedded systems.
2. Consumer Electronics: Employed in devices such as smart TVs, set-top boxes, and audio equipment for storing user preferences, settings, and log data.
3. Automotive: Utilized in automotive electronics for storing critical data like mileage, vehicle settings, and diagnostic information.
4. Industrial Automation: Integrated into industrial control systems to store configuration data, production logs, and sensor calibration values.

Detailed and Complete Alternative Models

1. AT24C02C-MAHM-T: A lower capacity variant with 2 kilobits of memory.
2. AT24C32C-MAHM-T: A higher capacity variant with 32 kilobits of memory.
3. AT24C64C-MAHM-T: An even higher capacity variant with 64 kilobits of memory.

These alternative models offer different memory capacities to suit specific application requirements.

Word count: 1100 words