IXFN180N10
Product Overview
Category
The IXFN180N10 belongs to the category of power MOSFETs.
Use
It is commonly used in power electronics applications such as motor control, power supplies, and inverters.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The IXFN180N10 is typically available in a TO-268 package.
Essence
The essence of the IXFN180N10 lies in its ability to efficiently handle high power levels while maintaining low losses.
Packaging/Quantity
It is usually packaged in reels or tubes and is available in varying quantities depending on the supplier.
Specifications
- Drain-Source Voltage (VDS): 100V
- Continuous Drain Current (ID): 180A
- On-Resistance (RDS(on)): 4.5mΩ
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 200nC
- Operating Temperature: -55°C to 175°C
Detailed Pin Configuration
The IXFN180N10 has a standard pin configuration with three pins: gate, drain, and source.
Functional Features
- High current-carrying capability
- Low conduction losses
- Fast switching times
- Robustness against overcurrent and overvoltage conditions
Advantages and Disadvantages
Advantages
- High power handling capacity
- Low on-resistance leading to reduced conduction losses
- Fast switching speed enabling efficient operation in high-frequency applications
Disadvantages
- Higher gate drive requirements compared to lower voltage MOSFETs
- Potential for increased switching losses at higher frequencies
Working Principles
The IXFN180N10 operates based on the principles of field-effect transistors, utilizing the control of the electric field within the semiconductor to modulate the flow of current between the drain and source terminals.
Detailed Application Field Plans
The IXFN180N10 finds extensive use in various applications including: - Motor drives for electric vehicles - Industrial power supplies - Renewable energy systems - Uninterruptible power supplies (UPS) - Welding equipment
Detailed and Complete Alternative Models
Some alternative models to the IXFN180N10 include: - IRFP4668PbF by Infineon - FDPF3860T by Fairchild Semiconductor - AUIRF7739L2 by International Rectifier
In conclusion, the IXFN180N10 power MOSFET offers high-performance characteristics suitable for demanding power electronics applications, making it a preferred choice for designers seeking efficient and reliable power switching solutions.
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What is the maximum drain-source voltage of IXFN180N10?
- The maximum drain-source voltage of IXFN180N10 is 100V.
What is the continuous drain current rating of IXFN180N10?
- The continuous drain current rating of IXFN180N10 is 180A.
What is the on-state resistance (RDS(on)) of IXFN180N10?
- The on-state resistance (RDS(on)) of IXFN180N10 is typically 4.5mΩ at VGS = 10V.
What is the gate threshold voltage of IXFN180N10?
- The gate threshold voltage of IXFN180N10 is typically 2.5V.
What is the maximum junction temperature of IXFN180N10?
- The maximum junction temperature of IXFN180N10 is 175°C.
What are the typical applications for IXFN180N10?
- IXFN180N10 is commonly used in high-current, high-frequency switching applications such as motor control, power supplies, and inverters.
What type of package does IXFN180N10 come in?
- IXFN180N10 is available in a TO-268 package.
Does IXFN180N10 require a heatsink for proper operation?
- Yes, IXFN180N10 typically requires a heatsink to dissipate heat effectively, especially in high-power applications.
What is the input capacitance of IXFN180N10?
- The input capacitance of IXFN180N10 is typically 6800pF.
Is IXFN180N10 suitable for automotive applications?
- Yes, IXFN180N10 is suitable for automotive applications due to its high current and voltage ratings, making it ideal for automotive power systems and motor control.