SPD04N80C3BTMA1
Product Overview
Category
The SPD04N80C3BTMA1 belongs to the category of power MOSFETs.
Use
It is commonly used in power supply applications, motor control, and other high-power switching circuits.
Characteristics
- High voltage capability
- Low on-resistance
- Fast switching speed
- Low gate charge
Package
The SPD04N80C3BTMA1 is typically available in a TO-252 package.
Essence
This MOSFET is essential for efficient power management and control in various electronic systems.
Packaging/Quantity
It is usually packaged in reels with a quantity of 2500 units per reel.
Specifications
- Drain-Source Voltage (VDS): 800V
- Continuous Drain Current (ID): 4A
- On-Resistance (RDS(on)): 1.8Ω
- Gate-Source Voltage (VGS): ±20V
- Total Gate Charge (Qg): 18nC
- Threshold Voltage (VGS(th)): 2-4V
Detailed Pin Configuration
The pin configuration of the SPD04N80C3BTMA1 is as follows: 1. Gate (G) 2. Drain (D) 3. Source (S)
Functional Features
- High voltage capability allows for use in various power applications.
- Low on-resistance minimizes power loss and improves efficiency.
- Fast switching speed enables rapid response in switching circuits.
Advantages
- Suitable for high-voltage applications
- Low power dissipation
- Enhanced system efficiency
Disadvantages
- Higher cost compared to lower voltage MOSFETs
- Requires careful handling due to its high voltage capability
Working Principles
The SPD04N80C3BTMA1 operates based on the principle of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals.
Detailed Application Field Plans
The SPD04N80C3BTMA1 is widely used in: - Switched-mode power supplies - Motor control systems - Inverters and converters - High-power lighting systems
Detailed and Complete Alternative Models
Some alternative models to the SPD04N80C3BTMA1 include: - IRFP460: Similar voltage and current ratings - FDPF7N80NZ: Comparable performance characteristics - STW4N150: Alternative option for high-voltage applications
In conclusion, the SPD04N80C3BTMA1 power MOSFET offers high voltage capability, low on-resistance, and fast switching speed, making it suitable for a wide range of power management and control applications.
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What is the maximum drain-source voltage rating of SPD04N80C3BTMA1?
- The maximum drain-source voltage rating of SPD04N80C3BTMA1 is 800V.
What is the continuous drain current rating of SPD04N80C3BTMA1?
- The continuous drain current rating of SPD04N80C3BTMA1 is 4A.
What is the on-resistance of SPD04N80C3BTMA1?
- The on-resistance of SPD04N80C3BTMA1 is typically 0.8 ohms.
What is the gate threshold voltage of SPD04N80C3BTMA1?
- The gate threshold voltage of SPD04N80C3BTMA1 is typically 2.5V.
What is the typical input capacitance of SPD04N80C3BTMA1?
- The typical input capacitance of SPD04N80C3BTMA1 is 1300pF.
What are the recommended operating temperature range for SPD04N80C3BTMA1?
- The recommended operating temperature range for SPD04N80C3BTMA1 is -55°C to 150°C.
Is SPD04N80C3BTMA1 suitable for high-frequency switching applications?
- Yes, SPD04N80C3BTMA1 is suitable for high-frequency switching applications due to its low on-resistance and fast switching characteristics.
Can SPD04N80C3BTMA1 be used in automotive applications?
- Yes, SPD04N80C3BTMA1 is designed for automotive applications and meets the necessary standards and requirements.
What are the typical applications for SPD04N80C3BTMA1?
- Typical applications for SPD04N80C3BTMA1 include motor control, power supplies, and inverters.
Does SPD04N80C3BTMA1 have built-in protection features?
- SPD04N80C3BTMA1 does not have built-in protection features and may require external circuitry for overcurrent or overvoltage protection.