IPW65R065C7XKSA1

Product Overview

Use

It is used as a high-voltage switching device in various electronic applications.

Characteristics

High voltage capability
Low gate charge
Fast switching speed
Low on-resistance

Package

The IPW65R065C7XKSA1 is typically available in a TO-247 package.

Essence

This MOSFET is essential for efficient power management and control in electronic circuits.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

Drain-Source Voltage (VDS): 650V
Continuous Drain Current (ID): 52A
Power Dissipation (PD): 300W
Gate-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 0.065Ω

Detailed Pin Configuration

The IPW65R065C7XKSA1 typically has three pins: 1. Gate (G) 2. Drain (D) 3. Source (S)

Functional Features

High voltage capability allows for use in demanding applications
Low gate charge enables fast switching
Low on-resistance minimizes power loss

Advantages

Suitable for high-power applications
Fast switching speed
Low power dissipation

Disadvantages

May require careful handling due to high voltage capability
Higher cost compared to lower voltage MOSFETs

Working Principles

The IPW65R065C7XKSA1 operates based on the principles of field-effect transistors, utilizing the control of electric fields to modulate the conductivity of the semiconductor material.

Detailed Application Field Plans

The IPW65R065C7XKSA1 is commonly used in the following applications: - Switched-mode power supplies - Motor control - Inverters - Solar inverters - LED lighting

Detailed and Complete Alternative Models

Some alternative models to the IPW65R065C7XKSA1 include: - IRFP4568PbF - FDPF51N25T - STW45NM50FD

In conclusion, the IPW65R065C7XKSA1 is a high-voltage power MOSFET with excellent characteristics suitable for a wide range of high-power electronic applications.

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