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IPD60R385CPBTMA1
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IPD60R385CPBTMA1

Product Overview

  • Category: Power MOSFET
  • Use: This MOSFET is used for power management applications in various electronic devices and systems.
  • Characteristics: High efficiency, low on-resistance, fast switching speed, and low gate charge.
  • Package: TO-252-3 (DPAK)
  • Essence: The essence of this product lies in its ability to efficiently manage power in electronic circuits.
  • Packaging/Quantity: Available in reels with a quantity of 2500 units.

Specifications

  • Voltage Rating: 600V
  • Current Rating: 9.5A
  • On-Resistance: 385mΩ
  • Package Type: DPAK
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  • Pin 1: Gate
  • Pin 2: Drain
  • Pin 3: Source

Functional Features

  • Fast switching speed
  • Low gate charge
  • Low on-resistance
  • High efficiency power management

Advantages

  • Efficient power management
  • Fast switching speed
  • Low on-resistance

Disadvantages

  • Limited current rating compared to higher power MOSFETs
  • Sensitive to voltage spikes

Working Principles

The IPD60R385CPBTMA1 operates based on the principles of field-effect transistors, where the voltage applied to the gate terminal controls the flow of current between the drain and source terminals. When a sufficient voltage is applied to the gate, the MOSFET allows current to flow through it, enabling efficient power management.

Detailed Application Field Plans

This MOSFET is suitable for a wide range of applications including: - Switching power supplies - Motor control - LED lighting - DC-DC converters - Battery management systems

Detailed and Complete Alternative Models

  • IPD60R385CPA: Similar specifications with a different package type (TO-220)
  • IPD60R380E6: Lower on-resistance with similar voltage and current ratings
  • IPD60R450E6: Higher current rating with slightly higher on-resistance

Note: The alternative models listed above are for reference purposes and may have differences in performance and package type.

This content provides a comprehensive overview of the IPD60R385CPBTMA1 Power MOSFET, covering its basic information, specifications, pin configuration, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.

Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi IPD60R385CPBTMA1 dalam penyelesaian teknikal

  1. What is the maximum drain current of IPD60R385CPBTMA1?

    • The maximum drain current of IPD60R385CPBTMA1 is 24A.

  2. What is the typical on-state resistance of IPD60R385CPBTMA1?

    • The typical on-state resistance of IPD60R385CPBTMA1 is 38mΩ.

  3. What is the gate threshold voltage of IPD60R385CPBTMA1?

    • The gate threshold voltage of IPD60R385CPBTMA1 is typically 2.5V.

  4. What is the maximum power dissipation of IPD60R385CPBTMA1?

    • The maximum power dissipation of IPD60R385CPBTMA1 is 150W.

  5. What are the recommended operating temperature range for IPD60R385CPBTMA1?

    • The recommended operating temperature range for IPD60R385CPBTMA1 is -55°C to 150°C.

  6. Is IPD60R385CPBTMA1 suitable for automotive applications?

    • Yes, IPD60R385CPBTMA1 is suitable for automotive applications.

  7. What is the gate charge of IPD60R385CPBTMA1?

    • The gate charge of IPD60R385CPBTMA1 is typically 17nC.

  8. Does IPD60R385CPBTMA1 have built-in ESD protection?

    • Yes, IPD60R385CPBTMA1 has built-in ESD protection.

  9. What is the package type of IPD60R385CPBTMA1?

    • IPD60R385CPBTMA1 comes in a TO-252-3 package.

  10. What are some common applications for IPD60R385CPBTMA1?

    • Common applications for IPD60R385CPBTMA1 include motor control, power supplies, and automotive systems.