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IPB80P04P407ATMA1
Introduction
The IPB80P04P407ATMA1 is a power MOSFET belonging to the category of electronic components. It is widely used in various electronic devices and systems due to its unique characteristics and performance.
Basic Information Overview
- Category: Power MOSFET
- Use: Used for power switching applications in electronic circuits
- Characteristics: High voltage capability, low on-state resistance, fast switching speed
- Package: TO-263-7 package
- Essence: Efficient power management and control
- Packaging/Quantity: Typically packaged in reels or tubes, quantity varies based on manufacturer
Specifications
- Voltage Rating: 80V
- Current Rating: 80A
- On-State Resistance: 4.07mΩ
- Package Type: TO-263-7
- Operating Temperature: -55°C to 175°C
- Gate-Source Voltage (Max): ±20V
Detailed Pin Configuration
The IPB80P04P407ATMA1 follows the standard pin configuration for a TO-263-7 package:
1. Gate
2. Drain
3. Source
4. N/C
5. Source
6. Drain
7. Source
Functional Features
- High voltage capability allows for use in various power applications
- Low on-state resistance minimizes power loss and heat generation
- Fast switching speed enables efficient power control
Advantages and Disadvantages
Advantages
- High voltage rating suitable for diverse applications
- Low on-state resistance for improved efficiency
- Fast switching speed enhances performance
Disadvantages
- Sensitive to static discharge, requiring careful handling
- Higher cost compared to standard MOSFETs
Working Principles
The IPB80P04P407ATMA1 operates based on the principles of field-effect transistors, utilizing the gate voltage to control the flow of current between the drain and source terminals. When the gate-source voltage is applied, the MOSFET switches on, allowing current to flow through the device.
Detailed Application Field Plans
The IPB80P04P407ATMA1 finds extensive use in the following application fields:
- Power supplies
- Motor control
- Inverters
- Switching regulators
- LED lighting systems
Detailed and Complete Alternative Models
- IPB80P06P4L11ATMA1
- IPB60R190C6ATMA1
- IPB50P04P407ATMA1
- IPB30R190CPATMA1
In conclusion, the IPB80P04P407ATMA1 power MOSFET offers high-performance characteristics suitable for a wide range of power switching applications, making it a valuable component in modern electronic systems.
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Senaraikan 10 soalan dan jawapan biasa yang berkaitan dengan aplikasi IPB80P04P407ATMA1 dalam penyelesaian teknikal
What is the maximum drain-source voltage of IPB80P04P407ATMA1?
- The maximum drain-source voltage of IPB80P04P407ATMA1 is 40V.
What is the continuous drain current rating of IPB80P04P407ATMA1?
- The continuous drain current rating of IPB80P04P407ATMA1 is 80A.
What is the on-state resistance of IPB80P04P407ATMA1?
- The on-state resistance of IPB80P04P407ATMA1 is typically 4.7mΩ.
What is the gate threshold voltage of IPB80P04P407ATMA1?
- The gate threshold voltage of IPB80P04P407ATMA1 is typically 2V.
Is IPB80P04P407ATMA1 suitable for high-power applications?
- Yes, IPB80P04P407ATMA1 is suitable for high-power applications due to its high current and voltage ratings.
What are the typical applications of IPB80P04P407ATMA1?
- IPB80P04P407ATMA1 is commonly used in motor control, power supplies, and automotive systems.
Does IPB80P04P407ATMA1 have built-in protection features?
- IPB80P04P407ATMA1 may include built-in protection features such as overcurrent protection and thermal shutdown.
What is the operating temperature range of IPB80P04P407ATMA1?
- The operating temperature range of IPB80P04P407ATMA1 is typically -55°C to 175°C.
Can IPB80P04P407ATMA1 be used in automotive applications?
- Yes, IPB80P04P407ATMA1 is suitable for automotive applications due to its robust design and high current handling capability.
Are there any recommended alternative components to IPB80P04P407ATMA1?
- Some recommended alternative components to IPB80P04P407ATMA1 include similar power MOSFETs from other manufacturers such as Infineon, STMicroelectronics, and Toshiba.